Text preview for : fds6975.pdf part of Fairchild Semiconductor fds6975 . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fds6975.pdf



Back to : fds6975.pdf | Home

February 1999




FDS6975
Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features
These P-Channel Logic Level MOSFETs are -6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V,
produced using Fairchild Semiconductor's advanced RDS(ON) = 0.045 @ VGS = -4.5 V.
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain Low gate charge (14.5nC typical).
low gate charge for superior switching performance. High performance trench technology for extremely low
These devices are well suited for notebook computer RDS(ON).
applications: load switching and power management,
battery charging circuits, and DC/DC conversion. High power and current handling capability.




SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16




D2
D2 5 4
D1 S
D1 FD 75
6
69 3

7 2
G2
S2
G1 8 1
SO-8 pin 1
S1


Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage