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Three dimensional infinite-element
simulations of a scanning microwave
microscope cantilever for imaging
at the nanoscale
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This article first appeared in www.keysight.com
the December 2013 issue of www.keysight.com/find/ict
Applied Physics Letters.
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Published in USA, August 3, 2014
5991-3789EN
Three-dimensional finite-element simulations of a scanning microwave microscope
cantilever for imaging at the nanoscale
A. O. Oladipo, M. Kasper, S. Lavdas, G. Gramse, F. Kienberger, and N. C. Panoiu
Citation: Applied Physics Letters 103, 213106 (2013); doi: 10.1063/1.4832456
View online: http://dx.doi.org/10.1063/1.4832456
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/103/21?ver=pdfcov
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On: Tue, 10 Dec 2013 23:06:47
APPLIED PHYSICS LETTERS 103, 213106 (2013)
Three-dimensional nite-element simulations of a scanning microwave
microscope cantilever for imaging at the nanoscale
1,2, a) 3 2 3 4 2,5
A. O. Oladipo, M. Kasper, S. Lavdas, G. Gramse, F. Kienberger, and N. C. Panoiu
1
Bio-Nano Consulting, 338 Euston Road, London NW1 3BT, United Kingdom
2
Electronic and Electrical Engineering Department, University College London, Torrington Place,
London WC1E 7JE, United Kingdom
3
Biophysics Institute, Johannes Kepler University Linz, Gruberstrasse 40, 4020 Linz, Austria
4
Agilent Technologies Austria GmbH, Gruberstrasse 40, 4020 Linz, Austria
5
Thomas Young Centre, London Centre for Nanotechnology, University College London, 17-19 Gordon Street,
London WC1H 0AH, United Kingdom
(Received 15 September 2013; accepted 3 November 2013; published online 19 November 2013)
We use three-dimensional finite-element numerical simulations to fully characterize the
electromagnetic interactions between a metallic nano-tip and cantilever that are part of a scanning
microwave microscopy (SMM) system and dielectric samples. In particular, we use this rigorous
computational technique to analyze and validate a recently developed SMM calibration procedure
for complex impedance measurements in reflection mode. Our simulations show that relatively
small changes in the conductivity of the substrates can cause significant variations in the measured
reflection coefficient. In addition, we demonstrate that the bulk systemic impedance is extremely
sensitive to modifications of system parameters, namely, variations in the cantilever inclination
angle as small as 1 cause changes in system impedance that can be larger than 10%. Finally, the
main experimental implications of these results to SMM imaging and calibration are identified and
discussed. V 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4832456]
C
The ability to observe and/or control nanoscale physical as a scattering reflection signal, S11. While SMM is com-
phenomena can be viewed as the backbone of most of the monly used in semiconductor industry for dopant profiling
nanotechnology research conducted nowadays by scientist applications and in materials science for calibrated capaci-
and engineers. The array of applications of nanotechnology tance measurements, there are several limitations that cur-
continues to expand rapidly, with beneficiaries in rently are not fully addressed. For instance, the effect of
electronics,1