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TBA820M
1.2W AUDIO AMPLIFIER
DESCRIPTION The TBA820M is a monolithic integrated audio amplifier in a 8 lead dual in-line plastic package. It is intended for use as low frequency class B power amplifier with wide range of supply voltage: 3 to 16V, in portable radios, cassette recorders and players etc. Main features are: minimum working supply voltage of 3V, low quiescent current, low number of external components, good ripple rejection, no cross-over distortion, low power dissipation. Output power: Po = 2W at 12V/8, 1.6W at 9V/4 and 1.2W at 9V/8.
Minidip
ORDERING NUMBER: TBA820M
ABSOLUTE MAXIMUM RATINGS
Symbol Vs Io Ptot Tstg, Tj Supply voltage Output peak current Power dissipation at Tamb = 50°C Storage and junction temperature Parameter Value 16 1.5 1 -40 to 150 Unit V A W °C
TEST AND APPLICATION CIRCUITS Figure 1. Circuit diagram with load connectedto the supply voltage Figure 2. Circuit diagram with load connected to ground
* Capacitor C6 must be used when high ripple rejection is requested.
June 1988
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PIN CONNECTION (top view)
SCHEMATIC DIAGRAM
THERMAL DATA
Symbol Rth-j-amb Parameter Thermal resistance junction-ambient max Value 100 Unit °C/W
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ELECTRICAL CHARACTERISTICS (Refer to the test circuits Vs = 9V, Tamb = 25 °C unless otherwise specified)
Symbol Vs Vo Id Ib Po Parameter Supply voltage Quiescent output voltage (pin 5) Quiescent drain current Bias current (pin 3) Output power d = 10% Rf = 120 Vs = 12V Vs = 9V Vs = 9V Vs = 6V Vs = 3.5V f = 1 kHz RL = 8 C5 = 1000 µF Rf = 120 Po = 500 mW RL = 8 f = 1 kHz f = 1 kHz RL = 8 f = 1 kHz eN iN S+N N SVR Input noise voltage (*) Input noise current (*) Signal to noise ratio (*) Po = 1.2W RL = 8 Gv = 34 dB RL = 8 f(ripple) = 100 Hz C6 = 47 µF Rf = 120 R1 = 10K R1 = 50 k C B = 680 pF C B = 220 pF R f = 33 R f = 120 R L = 8 R f = 33 R f = 120 f = 1 kHz R L = 8 R L = 4 R L = 8 R L = 4 R L = 4 2 1.6 1.2 0.75 0.25 5 25 to 7,000 Hz 25 to 20,000 0.8 % 0.4 75 45 34 3 0.4 80 dB 70 µV nA dB dB W W W W W M Test conditions Min. 3 4 4.5 4 0.1 Typ. Max. 16 5 12 Unit V V mA µA
0.9
Ri B
Input resistance (pin 3) Frequency response (-3 dB)
d
Distortion
Gv Gv
Voltage gain (open loop) Voltage gain (closed loop)
Supply voltage rejection (test circuit of fig. 2)
42
dB
(*) B = 22 Hz to 22 KHz
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Figure 3. Output power vs. supply voltage Figure 4. Harmonic distortion vs. output power Figure 5. Power dissipation and efficiency vs. output power
Figure 6. Maximum power d i ss i p ati on (s i ne wa ve operation)
Figure 7. Suggested value of CB vs. Rf
Figur e 8. Frequ ency response
Figure 9. Harmonic distortion vs. frequency
Figure 10. Supply voltage rejection (Fig. 2 circuit)
Figure 11. Quiescent current vs. supply voltage
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MINIDIP PACKAGE MECHANICAL DATA
DIM. MIN. A a1 B b b1 D E e e3 e4 F I L Z 3.18 7.95 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.125 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 0.313 0.100 0.300 0.300 0.260 0.200 0.150 0.060 mm TYP. 3.32 0.020 0.045 0.014 0.008 0.065 0.022 0.012 0.430 0.384 MAX. MIN. inch TYP. 0.131 MAX.
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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