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Advance Technical Information

TrenchT2TM HiperFETTM IXFH320N10T2 VDSS = 100V
Power MOSFET IXFT320N10T2 ID25 = 320A
RDS(on) 3.5m
N-Channel Enhancement Mode
Avalanche Rated TO-247 (IXFH)
Fast Intrinsic Diode

G
D D (Tab)
S
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25