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PD -90431C
IRFF230
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6798
HEXFET TRANSISTORS JANTXV2N6798
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF230 200V 0.40 5.5A
The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt- Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings
and temperature stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switch- n Hermetically Sealed
ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25