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PD - 9.1627A
IRG4ZH70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable
ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
Features C
q UltraFast IGBT optimized for high switching frequencies n-channel
q IGBT co-packaged with HEXFREDTM ultrafast,
VCES = 1200V
ultra-soft recovery antiparallel diodes for use in
bridge configurations VCE(ON)typ = 2.23V
q Low Gate Charge G
q Low profile low inductance SMD-10 Package E(k) @VGE = 15V, IC = 42A
q Separated control & Power-connections for E
easy paralleling
q Inherently good coplanarity
q Easy solder inspection and cleaning
Benefits
q Highest power density and efficiency available
q HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
q IGBTs optimized for specific application conditions SMD-10
q High input impedance requires low gate drive power
q Less noise and interference
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25