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PHP/PHB119NQ06T
N-channel TrenchMOSTM standard level FET
Rev. 01 -- 05 May 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM technology.
1.2 Features
s Standard level threshold s Very low on-state resistance.
1.3 Applications
s Motors, lamps, solenoids s Uninterruptible power supplies
s DC-to-DC converters s General industrial applications.
1.4 Quick reference data
s VDS 55 V s ID 75 A
s Ptot 200 W s RDSon 7.1 m.
2. Pinning information
Table 1: Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb d
2 drain (d) [1]
3 source (s)
mb mounting base; g
connected to
drain (d) MBB076 s
2
1 3 MBK116
MBK106
1 2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors PHP/PHB119NQ06T
N-channel TrenchMOSTM standard level FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PHP119NQ06T TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
PHB119NQ06T D2-PAK Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25