cep35p10_ceb35p10_cef35p10.pdf part of CET cep35p10 ceb35p10 cef35p10 cep35p10_ceb35p10_cef35p10.pdf, . Electronic Components Datasheets Active components Transistors CET cep35p10_ceb35p10

Text preview for : cep35p10_ceb35p10_cef35p10.pdf part of CET cep35p10 ceb35p10 cef35p10 . Electronic Components Datasheets Active components Transistors CET cep35p10_ceb35p10_cef35p10.pdf

Back to : cep35p10_ceb35p10_cef35p1 | Home

CEP35P10/CEB35P10
CEF35P10
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-100V, -32A, RDS(ON) =76m @VGS = -10V.
RDS(ON) =92m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D

Lead free product is acquired.

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS