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PD- 91836A



IRG4CC50WB
IRG4CC50WB IGBT Die in Wafer Form

C

600 V
Size 5
WARP Speed
G
6" Wafer
E



Electrical Characteristics ( Wafer Form )
Parameter Description Guaranteed (Min/Max) Test Conditions
VCE (on) Collector-to-Emitter Saturation Voltage 2.3V Max. IC = 10A, TJ = 25