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TECHNICAL DATA

PNP HIGH VOLTAGE SILICON TRANSISTOR
Qualified per MIL-PRF-19500/397

Devices Qualified Level

JAN, JANTX
2N3743 2N4930 2N4931
JANTXV

MAXIMUM RATINGS
Ratings Sym 2N3743 2N4930 2N4931 Unit
Collector-Emitter Voltage VCEO 300 200 250 Vdc
Collector-Base Voltage VCBO 300 200 250 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 200 mAdc
Total Power Dissipation @TA = +250C 1 1.0 W
PT
@TC = +250C 2 5.0 W
Operating & Storage Junction Temperature Range 0
TJ, Tstg -65 to +200 C TO-39*
THERMAL CHARACTERISTICS (TO-205AD)
Characteristics Symbol Max. Unit
0
Thermal Resistance Junction-to-Case RJC 35 C/W
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 1.0 mAdc 2N3743 300
V(BR)CEO Vdc
2N4930 200
2N4931 250
Collector-Emitter Breakdown Voltage
IC = 100