irff9210.pdf part of International Rectifier irff9210 irff9210.pdf, . Electronic Components Datasheets Active components Transistors International Rectifier irff9210.pdf text manual preview

Text preview for : irff9210.pdf part of International Rectifier irff9210 . Electronic Components Datasheets Active components Transistors International Rectifier irff9210.pdf

Back to : irff9210.pdf | Home

PD - 90382

REPETITIVE A ALANCHE AND dv/dt RATED
V

HEXFET TRANSISTORS
THRU-HOLE (TO-205AF) IRFF9210
200V, P-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF9210 -200V 3.0 -1.5A

The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt- Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings
and temperature stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switch- n Hermetically Sealed
ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling

Absolute Maximum Ratings
Parameter Units
ID @ VGS = -10V, TC = 25