Text preview for : stp11nm60a_stp11nm60afp_stb11nm60a-1.pdf part of ST p11nm60a p11nm60afp b11nm60a-1 . Electronic Components Datasheets Active components Transistors ST stp11nm60a_stp11nm60afp_stb11nm60a-1.pdf
Back to : stp11nm60a_stp11nm60afp_s | Home
STP11NM60A
STP11NM60AFP - STB11NM60A-1
N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK
MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID
STP11NM60A 600 V <0.45 11 A
STP11NM60AFP 600 V <0.45 11 A
STB11NM60A-1 600 V <0.45 11 A
n TYPICAL RDS(on) = 0.4 3
2
3
12
n HIGH dv/dt 1
n LOW INPUT CAPACITANCE AND GATE
CHARGE TO-220 I2PAK
s)
n LOW GATE INPUT RESISTANCE
t(
3
2
uc
1
TO-220FP
DESCRIPTION
d
ro
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
P
te
layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM
on-resistance, impressively high dv/dt. The adoption
of the Company's proprietary strip technique yields
le
so
overall dynamic performance that is significantly
better than that of similar competition's products.
- Ob
(s)
APPLICATIONS
The MDmeshTM family is very suitable for increasing
ct
power density of high voltage converters allowing
du
system miniaturization and higher efficiencies.
o
e Pr
o let
O bs
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP11NM60A P11NM60A TO-220 TUBE
STP11NM60AFP P11NM60AFP TO-220FP TUBE
STB11NM60A-1 B11NM60A I2PAK TUBE
March 2002 1/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP11NM60A
STP11NM60AFP
STB11NM60A-1
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage