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AO4850
Dual N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4850 uses advanced trench technology to provide VDS (V) = 75V
excellent RDS(ON) and low gate charge. The two MOSFETs ID = 3.1A (VGS = 10V)
may be used in H-bridge, Inverters and other applications. RDS(ON) < 130m (VGS = 10V)
AO4850 is Pb-free (meets ROHS & Sony 259 RDS(ON) < 165m (VGS = 4.5V)
specifications).

D1 D2

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G1 G2
S1 S2

SOIC-8

Absolute Maximum Ratings TA=25