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IPP050N06N G IPB050N06N G
TM
"%&$!"# Power-Transistor
Product Summary
Features
V 9G .( I
2
0AB B = D 4@A 3
O >@5 AE8 78 6 2 >= 4@B 0= AG=
@42 B80B
2 82 8
5 >=
R + >=< 0F + & D >=
4@A8 ,&/ X"
O ' 2 70= 4;4= 2 4< 4= = 0;; 4;
= 70= B >@< 4D
I9 )(( 6
O R >? 4@0B 6 B ? 4@0B
8 4<
= C@4
O D 0= 74 @0B
0; 2 43
O ) 15 ; ? ; 8 6 * >" + 2 >< ? ; B
@44 403 0B= 80=
O " 0;
>64= @44 02 2 >@3 8 6 B #
5 = >
Type #) ) ' ' #) ' '
Package E%HD**(%+ E%HD*.+%+
Marking (-(C(.C (-(C(.C
Maximum ratings, 0B U R C=4AA >B
T ; A4
74@E8 A? 42 843
58
Parameter Symbol Conditions Value Unit
)#
>= 8 C>CA 3 @08 2 C@@4=
B= = B I9 T 8 R )(( 6
T 8 R )((
*#
A43
) C; 3 @08 2 C@@4=
= B I 9$[_W]P T 8 R ,((
D 0= 74 4=
0; 2 = 4 A4
4@6G A8 6; ? C; E 6G I 9 R =G " 0)( X@
I 9 V 9G -
* 4D4@A4 3 8 4 3 v 'Ot
>3 Ov 'Ot Oi 'Ot T A . VI'p]
T U$XLb R
!0B A>C@2 4 D B
4 >;064 V =G o*( I
AA8 8
) >E4@ 3 8 ? 0B>= P ^Z^ T 8 R +(( J
( ? 4@0B 6 0= AB
8= 3 >@064 B ? 4@0B
4< C@4 T U T ]^R
R
# 2 ; 0B 2 0B
8 8
< 2 46>@G #' #
< 43
BA 8 B 3 @4 B
C@@4= 8 ; 8 1G 1>= E8 E8 0= *^S@8
B 2 78 8 01; B 2 0@@G
7 74 ? A 4 >
*#
+ 44 56C@4
8
* 4D
? 064
IPP050N06N G IPB050N06N G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
,74@< 0;@4A8 0= 4 9 2 B 2 0A4
AB 2 C= 8 >= R ^S@8 % % (&- A'J
+ & D >= 3 4D2 4 >= )
4@A8 8 R ^S@6 =<
< 8 8 0;5 ? @8 B
>>B =
2 < * 2 >>; 6 0@40+#
8= % % ,(
Electrical characteristics, 0B U R C=4AA >B
T ; A4
74@E8 A? 42 843
58
Static characteristics
@08 A>C@2 4 1@40: 3 >E= D B
= >;064 V "7F#9GG V =G - I 9 < .( % % I
!0B B
4 7@4A7>; D B
3 >;064 V =G"^S# V 9G4V =G I 9 T *&) + ,
V 9G - V =G -
/4@> 60B D B 3 @08 2 C@@4=
4 >;064 = B I 9GG % (&() ) p6
T U R
V 9G - V =G -
% ) )((
T U R
!0B
4A>C@2 4 ; 064 2 C@@4=
40: B I =GG V =G - V 9G - % )( )(( Y6
@08 A>C@2 4 >= 0B @4A8 0= 4
= AB 4 AB 2 R 9G"ZY# V =G - I 9 % ,&) - X"
V =G - I 9
+&0 ,&/
+ & D >=
4@A8
!0B @4A8 0= 4
4 AB 2 R= % )&1 % "
eV 9Ge5*eI 9eR 9G"ZY#XLb
H\LY]NZYO_N^LYNP g Q] /, ),0 % G
I 9
+# *
4D2 4 >= < < F < < F
< < 4? >F )
8 G B7
* E8 2 < >= ;
4 0G4@ T < B 2 : 2 >? ? 4@ 0@40 5 3 @08
78 >@ =
2 >= 42 B
) 8 D 80;8 AB;08
= 8 >= A 4@B = 8 @
2 ;
* 4D
? 064
IPP050N06N G IPB050N06N G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
#= CB 0? 02 8 2 4
? 2 B0= C T]] % ,.(( .)(( [<
V =G - V 9G -
( CBCB 0? 02 8 2 4
? 2 B0= C Z]] % )-(( *(((
f & " H
* 4D4@A4 B A5 2 0? 02 8 2 4
@0= 4@ B0= C \]] % +-( -*-
,C@= 3 4; B 4
>= 0G 8< t O"ZY# % *) +* Y]
*8 B 4
A4 8
< t\ V 99 - V =G - % +) ,/
,C@= 53 4; B 4
>5 0G 8
< t O"ZQQ# I 9 R =
" % -1 00
;8
0; B 4
< tQ % +( ,-
!0B 70@R4 70@02 B AB A,#
4 4@8 8
2
!0B B A>C@2 4 2 70@64
4 > Q R] % *, +* Y8
!0B 2 70@64 0B7@4A7>;
4 B 3 Q R"^S# % 1&/ )+
!0B B 3 @08 2 70@64
4 > = Q RO V 99 - I 9 % -) /.
Q ]a V =G B -
>
+ E8 78 6 2 70@64
B =
2 % .- 1-
4
!0B 2 70@64 B 0;
>B QR % )*. )./
!0B ? ; 40C D B
4 0B >;064 V [WL^PL_ % -&* % I
? 2
( CBCB 70@64 Q Z]] V 99 - V =G - % ,/ .*
Reverse Diode
8 4 2 >= 8 >CA 5
>3 B= >@E0@3 2 C@@4=B IG % % )(( 6
T 8 R
8 4 ? C; 2 C@@4=
>3 A4 B I G$[_W]P % % ,((
V =G - I <
8 45
>3 >@E0@3 D B
>;064 V G9 % (&1+ )&+ I
T U R
* 4D4@A4 @42 >D B 4
4@G 8
< t \\ V F - I <4I G % .( /- Y]
Q \\ Oi <'Ot T A
* 4D4@A4 @42 >D 2 70@64
4@G % )+( ).( Y8
,#
8 >@ 4
+ 44 56C@4 5 60B 2 70@64 ? 0@0< 4B 3 45=B
4@ 8 8>=
8
* 4D
? 064
IPP050N06N G IPB050N06N G
1 Power dissipation 2 Drain current
P ^Z^4Q"T 8 V =G" - I 94Q"T 8 V =G" -
350 120
300
100
250
80
200
P tot [W]
I D [A]
60
150
40
100
20
50
0 0
0 50 100 150 200 0 50 100 150 200
T C [