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February 1996
NDS9953A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V.
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density High density cell design for extremely low RDS(ON).
process is especially tailored to minimize on-state resistance,
High power and current handling capability in a widely used
provide superior switching performance, and withstand high
surface mount package.
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage Dual MOSFET in surface mount package.
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
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5 4
6 3
7 2
8 1
Absolute Maximum Ratings T A= 25