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BUK71/7909-75AIE
TrenchPLUS standard level FET
Rev. 01 -- 9 August 2002 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
Product availability:
BUK7109-75AIE in SOT426 (D2-PAK)
BUK7909-75AIE in SOT263B (TO-220AB).
1.2 Features
s Integrated current sensor s Q101 compliant
s ESD protection s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 75 V s RDSon = 8.0 m (typ)
s ID 120 A s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb d
2 Isense mb
3 drain (d)
4 Kelvin source g
1 2 3 4 5
5 source (s)
mb mounting base;
s
connected to drain (d) Front view MBK127 MBL368 Isense Kelvin source
1 5
MBL263
SOT426 (D2-PAK) SOT263B (TO-220AB)
Philips Semiconductors BUK71/7909-75AIE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 75 V
VDGS drain-gate voltage (DC) - 75 V
VGS gate-source voltage (DC) -