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June 1996
NDT454P
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
Power SOT P-Channel enhancement mode power field effect -5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V
transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.07 @ VGS = -6V
density, DMOS technology. This very high density process is RDS(ON) = 0.09 @ VGS = -4.5V.
especially tailored to minimize on-state resistance and provide High density cell design for extremely low RDS(ON).
superior switching performance. These devices are particularly
High power and current handling capability in a widely used
suited for low voltage applications such as notebook computer
surface mount package.
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
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D
D
G D S
G S
Absolute Maximum Ratings T A = 25