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PD - 94334A
RADIATION HARDENED IRHF57133SE
POWER MOSFET 130V, N-CHANNEL
THRU-HOLE (TO-39) 4#
c
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF57133SE 100K Rads (Si) 0.1 10.5A
TO-39
TM
International Rectifier's R5 technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance
n Neutron Tolerant
up to an LET of 80 (MeV/(mg/cm2)). The combination
n Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power
n Repetitive Avalanche Ratings
losses in switching applications such as DC to DC n Dynamic dv/dt Ratings
converters and motor control. These devices retain
n Simple Drive Requirements
all of the well established advantages of MOSFETs
n Ease of Paralleling
such as voltage control, fast switching, ease of paral-
n Hermetically Sealed
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
ID @ VGS = 12V, TC = 25