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BD677/A/679/A681
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications 1
2
The complementary PNP types are BD678, 3
BD678A, BD680, BD680A and BD682
respectively. SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
NPN BD677/A BD679/A BD681
PNP BD678/A BD680/A BD682
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 4 A
I CM Collector Peak Current 6 A
IB Base Current 0.1 A
o
P tot T otal Dissipation at Tc 25 C 40 W
o
T s tg Storage T emperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
For PNP types voltage and current values are negative.
October 1995 1/4
BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 3.12 C/W
o
R thj- amb Thermal Resistance Junction-ambient Max 100 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CBO Collector Cut-off V CE = rated VCBO 0.2 mA
o
Current (I E = 0) V CE = rated VCBO TC = 100 C 2 mA
I CEO Collector Cut-off V CE = half rated V CEO 0.5 mA
Current (I B = 0)
I EBO Emitter Cut- off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 50 mA
Sustaining Voltage for BD677/677A/678/678A 60 V
for BD679/679A/680/680A 80 V
for BD681/682 100 V
V CE(sat) Collector-Emitter for BD677/678/679/680/681/682
Saturation Voltage I C = 1.5 A I B = 30 mA 2.5 V
for BD677A/678A/679A/680A
IC = 2 A I B = 40 mA 2.8 V
V BE Base-Emitter Voltage for BD677/678/679/680/681/682
I C = 1.5 A V CE = 3 V 2.5 V
for BD677A/678A/679A/680A
IC = 2 A V CE = 3 V 2.5 V
h FE DC Current Gain for BD677/678/679/680/681/682
I C = 1.5 A V CE = 3 V 750
for BD677A/678A/679A/680A
IC = 2 A V CE = 3 V 750
h fe Small Signal Current I C = 1.5 A V CE = 3 V f = 1MHz 1
Gain
Pulsed: Pulse duration = 300