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PHOTOTRANSISTOR OPTOCOUPLER
MCT4
PACKAGE DIMENSIONS
0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52)
0.210 (5.34) 0.170 (4.32)
0.560 (14.22) 0.500 (12.70)
0.100 (2.54) DIA. 3 0.048 (1.22) 0.028 (0.71) 0.046 (1.16) 0.036 (0.92) 45° 4 1 0.019 (0.48) Ø 4X 0.016 (0.41)
CATHODE 3
SCHEMATIC
2
ANODE 1 2 COLLECTOR
4 EMITTER
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
DESCRIPTION
The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor.
FEATURES
· Hermetically package · High current transfer ratio; typically 35% · High isolation resistance; 1011 ohms at 500 volts · High voltage isolation emitter to detector
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PHOTOTRANSISTOR OPTOCOUPLER
MCT4
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Flow) EMITTER Power Dissipation at 25°C Ambient Continuous Forward Current Reverse Voltage Forward Current - Peak (1 µs pulse, 300 pps) DETECTOR Power Dissipation 25°C Ambient Collector to Emitter Voltage Emitter to Collector Voltage COUPLER Total Power Dissipation Isolation Voltage
(3) (2) (1)
(TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-F PD IF VR IF(pk) PD VCEO VECO PD Rating -55 to +125 -65 to +150 260 for 10 sec 90 40 3 3.0 200 30 7 250 1000 Unit °C °C °C mW mA V A mW V V mW VDC
ELECTRICAL / OPTICAL CHARACTERISTICS
Parameters EMITTER Forward Voltage Reverse Current Capacitance DETECTOR Breakdown Voltage Collector to Emitter Emitter to Collector Leakage Current Collector to Emitter Capacitance Collector to Emitter NOTE: 1. Derate power linearly 1.2 mW/°C above 25°C 2. Derate power linearly 2.67 mW/°C above 25°C 3. Derate power linearly 3.3 mW/°C above 25°C VCE = 0 IF = 40 mA VR = 3.0 V V=0V
(TA =25°C)
INDIVIDUAL COMPONENT CHARACTERISTICS
Test Conditions Symbol VF IR C Min Typ 1.30 0.15 150 Max 1.50 10 Units V µA pF
IC = 1.0 mA, IF = 0 IE = 100 µA, IF = 0 VCE = 10 V, IF = 0
BVCEO BVECO ICEO CCE
30 7 12 5 2 50
V V nA pF
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TRANSFER CHARACTERISTICS
DC Characteristics COUPLED DC current Transfer Ratio (note 1) Saturation Voltage AC Characteristics Capacitance LED to Detector Bandwidth (Fig. 5) Rise Time and Fall Time (see operating schematic) (TA = 25°C Unless otherwise specified.) Test Conditions VCE = 10 V, IF = 10 mA IC = 500 µA, IF = 10 mA IC = 2 mA, IF = 50 mA Test Conditions Note 2 IC = 2 mA, VCE = 10 V, Note 3 Symbol CTR VCE(SAT) Symbol Min Min 15 Typ 35 0.1 0.2 Typ 1.8 300 2 0.5 Max Max Units % V Units pF kHz µs
ISOLATION CHARACTERISTICS
Characteristic Isolation Resistance Breakdown Voltage Test Conditions V = 500 VDC Time = 1 sec Symbol RISO Min 1011 1000 Typ 1012 1500 Max Units ! VDC
NOTE: 1. The current transfer ratio (IC/IF) is the ratio of the detector collector current to the LED input current with VCE at 10 volts. 2. The frequency at which ic is 3 dB down from the 1 kHz value. 3. Rise time (tr) is the time required for the collector current to increase from 10% of its final value, to 90%. Fall time (tf) is the time required for the collector current to decrease from 90% of its initial value to 10%.
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Figure 1. Detector Output Characteristics
20 IC, COLLECTOR CURRENT DETECTOR (mA) 25 IF = 60 mA IC, COLLECTOR CURRENT DETECTOR (mA)
Figure 2. Input Current vs. Output Current
20 25 VCE = 10 VOLTS 20 15
20 IF = 40 mA 15 10 IF = 20 mA IF = 10 mA
10 5 0
5
5
10
15
20
25
30
0
10
20
30
40
50
60
VCE, COLLECTOR VOLTAGE DETECTOR (V)
IF, INPUT CURRENT LED (mA)
Figure 3. Dark Current vs. Temperature
10-4 10-5 ICEO, DARK CURRENT (A) 10-6 10-7 10-8 10-9 10-10 10-11 10-12 -60 -40 -20 0 20 40 60 80 100 120 140 VCE = 10 VOLTS CTR, NORMALIZED (%)
Figure 4. Current Output vs. Temperature
110 100 90 80 70 60 50 40 30 -60 -40 -20 0 20 40 60 80 100 LED CURRENT - 10 mA VCE = 10 VOLTS FREE STANDING DEVICE
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Output vs. Frequency
2.0 1.8 1.6
RL=
Figure 6. Switching Time vs. Collector Current
VCE = 10 VOLTS 1.4 COLLECTOR CURRENT (mA) 1.2 1.0 0.8
RL=
VCE = 10 VOLTS
100
12 SWITCHING TIME (µs) 10 8 6 4 2
RL= 470
RL = 1000
0.6 0.4 0.2
RL = 470
1000
RL = 100
1K
10K FREQUENCY (Hz)
100K
1
0.1
0.2
0.3 0.4
0.6 0.8 1
2
3
4
5 6 7 8 10
IC, COLLECTOR CURRENT (mA)
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MODULATION INPUT
1 µF
47
CONSTANT CURRENT INPUT
IC
VCC = 10 VOLTS
PULSE INPUT
47
IC
VCC = 10 VOLTS
LED
DETECTOR OUTPUT
LED
DETECTOR PULSE OUTPUT RL = 100
IF
RL = 100
IF
Figure 7. Modulation Circuit Used to Obtain Output vs. Frequency Plot
Figure 8. Circuit Used to Obtain Switching Time vs. Collector Current Plot
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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