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KSH13003
KSH13003
High Voltage Power Transistor D-PACK for Surface Mount Applications
· · · · High speed Switching Suitable for Switching Regulator Motor Control Straight Lead (I.PACK, I Suffix) Lead Formed for Surface Mount Applications (No Suffix)
1
D-PAK 1.Base
1
I-PAK 3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 40 150 - 65 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) IEBO hFE VCE(sat) Parameter * Collector-Emitter Breakdown Voltage Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Test Condition IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.1A VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A 4 1.1 4.0 0.7 21 8 5 Min. 400 Typ. Max. 10 40 0.5 1 3 1 1.2 V V V V V pF MHz µs µs µs Units V µA
VBE(sat) Cob fT tON tSTG tF
* Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON time Storage time Fall Time
* Pulse Test: Pulse Width=5ms, Duty Cycle10%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSH13003
Typical Characteristics
2.0 1.8
100
VCE =2V
A A 00m =450m IB=400mA IB IB=350mA
IC[A], COLLECTOR CURRENT
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0
IB=300mA
IB=250mA
hFE, DC CURRENT GAIN
I B=5
IB=200mA IB=150mA
10
IB=100mA IB=50mA
1
IB=0mA
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0.01 0.1 1 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
VBE(sat),VCE(sat)[V], SATURATION VOLTAGE
IC=4IB
tstg
1
VBE(sat)
1
tstg,tf[uS], TIME
tf
VCE(sat)
0.1
0.1
0.01 0.01
0.01 0.1 1 10 0.1 1
IC[A], COLLECTOR CURRENT
IB[A], BASE CURRENT
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10
50
IC MAX. (PLUSE)
IC[A], COLLECTOR CURRENT
10 uS 5m S 1 S 00u S
45
IC MAX.(DC)
1
PD[W], POWER DISSIPATION
1000
1m
40 35 30 25 20 15 10 5
0.1
0.01 1 10 100
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSH13003
Package Demensions
D-PAK
6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50)
0.70 ±0.20
2.30 ±0.10 0.50 ±0.10
0.60 ±0.20
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
0.91 ±0.10
0.80 ±0.20
MAX0.96 2.30TYP [2.30±0.20]
0.76 ±0.10 2.30TYP [2.30±0.20]
0.89 ±0.10
0.50 ±0.10 1.02 ±0.20 2.30 ±0.20
(0.70)
(0.90) (0.10) (3.05)
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
(1.00)
6.60 ±0.20 (5.34) (5.04) (1.50)
MIN0.55
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench® QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E