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SHANGHAI SUNRISE ELECTRONICS CO., LTD. IN4148
SILICON EPITAXIAL PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA
FEATURES
ˇ Small glass structure ensures high reliability ˇ Fast switching ˇ Low leakage ˇ High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension
TECHNICAL SPECIFICATION
DO - 35
1.0 (25.4) MIN. .120 (3.0) .200 (5.1) 1.0 (25.4) MIN.
.060 (1.5) .090 (2.3) DIA.
MECHANICAL DATA
ˇ Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C ˇ Case: Glass,hermetically sealed ˇ Polarity: Color band denotes cathode ˇ Mounting position: Any
.018 (0.46) .022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage Peak Reverse Voltage Forward Current (average) Repetitive Forward Peak Current Forward Voltage (IF=10mA) Reverse Current (VR=20V) Reverse Current (VR=75V)
SYMBOL
VALUE
UNITS
VR VRM IO IFRM VF IR1
IR2 Reverse Current (VR=20V,TJ=100oC) Capacitance (note 1) Ct IF Reverse Recovery Time (note 2) R(ja) Thermal Resistance (junction to ambient) (note 3) TSTG,TJ Operating Junction and Storage Temperature Range -55 +175 Notes: 1: VR=0V, f=1 MHz 2: IF=10mA to IR=1mA, VR=6V, RL=100 3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
75 100 150 300 1 25 5 50 4 4 0.35
V V mA mA V nA ľA A pF nS
o
C/mW o C
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