Text preview for : RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf part of Rficsolutions.Inc RGLNA08 The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is 1.5 mm x 1.0 mm. A single +3.3V and 12.4 mA
current bias the LNA. No input and output matching
components are required.
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RFIC Solutions Inc.
Low Noise Amplifier
Description .
Preliminary Datasheet RGLNA08
Functional Diagram
.
The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is 1.5 mm x 1.0 mm. A single +3.3V and 12.4 mA current bias the LNA. No input and output matching components are required.
Applications. · IEEE 802.11 b/g WLAN · WLAN MIMO System · WiFi Systems · ISM Band Systems
.
Key Features. . · High Gain · High Performance · Low noise as low as 1.5dB
Electrical Specifications.
.
Conditions: Vcc = 3 V & TA=25 0C
Parameter
Frequency Range Noise Figure OIP3 Power Output (P1 dB) Gain Input Return Loss Output Return Loss
Min
2.4
Typical
1.5 24 14 17 11 13
Max
2.5
Units
GHz dB dBm dBm dB dB dB
March 12, 2007
www.rficsolutions.com
Page 1 of 2
RFIC Solutions Inc. Proprietary Information
Data subject to change without Notice
RFIC Solutions Inc.
Low Noise Amplifier
Simulated results. Gain Vs Freq .
Preliminary Datasheet RGLNA08
Noise Figure Vs Freq
Input/Output Return Loss Vs Freq
Layout
March 12, 2007
www.rficsolutions.com
Page 2 of 2
RFIC Solutions Inc. Proprietary Information
Data subject to change without Notice