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VISHAY

1N4728A to 1N4764A
Vishay Semiconductors

Silicon Power Zener Diodes
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Features
· Silicon Planar Power Zener Diodes · For use in stabilizing and clipping circuits with high power rating. · Standard Zener voltage tolerance suffix "A" for ± 5 % tolerance. Other Zener voltages and tolerances are available upon request.

949369

Mechanical Data
Case: DO-41 Glass Case Weight: approx. 350 mg Packaging Codes/Options: TR / 5k per 13 " reel , 25k/box TAP / 5k per Ammo mag. (52 mm tape), 25k/box

Applications
Voltage stabilization

Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Z-current Junction temperature Storage temperature range Junction ambient l = 9.5 mm (3/8 "), TL = constant Tamb 50 °C Test condition Symbol PDiss IZ Tj Tstg RthJA Value 1 PV/VZ 200 - 65 to + 200 100 Unit W mA °C °C K/W

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.2 Unit V

Document Number 85816 Rev. A3, 26-Mar-03

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1N4728A to 1N4764A
Vishay Semiconductors Electrical Characteristics
1N4728A...1N4764A Partnumber Nominal Zener Voltage1) VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK IR Test Voltage VR V 1 1 1 1 1 1 2 3 4 5 6 7 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56 62.2 69.2 76.0 Test Current Maximum Dynamic Impedance Maximum Reverse Leakage Current Surge curent

VISHAY

Maximum Regulator Current2) IZM @ Tamb = 50 °C mA 276 252 234 217 193 178 162 146 133 121 110 100 91 83 76 69 61 57 50 45 41 38 34 30 27 25 23 22 19 18 16 14 13 12 11 10 9

IR @Tamb = 25 °C mA 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45

V 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A 1N4739A * 1N4740A * 1N4741A * 1N4742A * 1N4743A * 1N4744A * 1N4745A * 1N4746A * 1N4747A * 1N4748A * 1N4749A * 1N4750A * 1N4751A * 1N4752A * 1N4753A * 1N4754A * 1N4755A * 1N4756A * 1N4757A * 1N4758A * 1N4759A * 1N4760A * 1N4761A * 1N4762A * 1N4763A * 1N4764A *
1)

mA 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14 12.5 11.5 10.5 9.5 8.5 7.5 7 6.5 6 5.5 5 4.5 4 3.7 3.3 3.0 2.8 2.5

10 10 9 9 8 7 5 2 0.5 0 0.5 0 7 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350

400 400 400 400 500 550 600 700 700 700 700 700 700 700 700 100 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000

mA 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25

µA 100 100 50 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5

3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100

Based on dc-measurement at theral equilibrium while maitaining the lead temperature (TL) at 30 °C + 1 °C, 9.5 mm (3/8 ") from the diode body. Valid provided that electrodes at a distance of 10 mm from case are kept at ambient temperature. Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin 35 nA at Tj 25 °C

2) *)

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Document Number 85816 Rev. A3, 26-Mar-03

VISHAY
Package Dimensions in mm
Cathode Identification
technical drawings according to DIN specifications

1N4728A to 1N4764A
Vishay Semiconductors

94 9368

0.85 max.

2.5 max.

StandardGlass Case 54 B 2 DIN 41880 JEDEC DO 41 Weight max. 0.3g

26 min.

4.1 max.

26 min.

Document Number 85816 Rev. A3, 26-Mar-03

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1N4728A to 1N4764A
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 85816 Rev. A3, 26-Mar-03

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.