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NTE123AP Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159)
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 150mA VCE = 1V, IC = 500mA 20 40 80 100 40 - - - - - - - - 300 - V(BR)CEO IC = 1mA, IB = 0, Note 1 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICEV IBEV VCE = 35V, VEB(off) = 0.4V VCE = 35V, VEB(off) = 0.4V 40 60 6 - - - - - - - - - - 0.1 0.1 V V V µA µA Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter ON Characteristics (Note 1) (Cont'd) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Switching Characteristics Delay Time Rise Time Storage Time Fall Time td tr ts tf VCC = 30V, VEB(off) = 2V, ( ) IC = 150mA IB1 = 15mA 150mA, VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA - - - - - - - - 15 20 225 30 ns ns ns ns fT Ccb Ceb hie hre hfe hoe IC = 20mA, VCE = 10V, f = 100MHz VCB = 5V, IE = 0, f = 100kHz VCB = 0.5V, IC = 0, f = 100kHz IC = 1mA, VCE = 10V, f = 1kHz IC = 1mA, VCE = 10V, f = 1kHz IC = 1mA, VCE = 10V, f = 1kHz IC = 1mA, VCE = 10V, f = 1kHz 250 - - 1.0 0.1 40 1.0 - - - - - - - - 6.5 30 15 8.0 500 30 µmhos MHz pF pF k x 10-6 VCE(sat) VBE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA - - 0.75 - - - - - 0.4 0.75 0.95 1.2 V V V V Symbol Test Conditions Min Typ Max Unit
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
E B C .100 (2.54) .050 (1.27)
.165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max