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NTE159 Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)
Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics CollectorEmitter Breakdown Voltage CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 10mA, IB = 0 V(BR)CBO IC = 10µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 ICBO IEBO VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = +75°C Emitter Cutoff Current 80 80 5 50 5 100 V V V nA µA nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter ON Characteristics DC Current Gain hFE VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA VCE = 10V, IC = 500mA CollectorEmitter Saturation Voltage VCE(sat) VBE(sat) VBE(on) fT Cob Cib hie hre hfe hoe NF IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 BaseEmitter Saturation Voltage IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 BaseEmitter ON Voltage SmallSignal Characteristics Current GainBandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio SmallSignal Current Gain Output Admittance Noise Figure Switching Characteristics TurnOn Time TurnOff Time ton toff VCC = 30V, VBE(off) = 3.8V, IC = 500mA, IB1 = 50mA VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA 100 400 ns ns IC = 50mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 100kHz VCB = 10V, IE = 0, f = 100kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 10mA, VCE = 10V, f = 1kHz IC = 100µA, VCE = 10V, RS = 1k, f = 1kHz 100 550 100 200 100 500 30 110 3 µmhos dB MHz pF pF k x 106 IC = 500mA, VCE = 500mV 25 40 50 40 30 250 0.15 0.5 0.9 1.1 1.1 V V V V V Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
E B C .100 (2.54) .050 (1.27)
.165 (4.2) Max
.105 (2.67) Max .105 (2.67) Max .205 (5.2) Max