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2SC1970
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2SC1970 Silicon NPN Transistor RF Power Output
The 2SC1970 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.
WINTransceiver
BEC
Features:
High Power Gain: Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz)
Application:
0,8 to 1 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA 17V 35V 4V 0,6A 1W 5W +150°C -55° to +150°C 25°C/W 125#176;C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 40 17 V V V(BR)CBO IC = 5mA, IE = 0
Collector-Emitter Breakdown Voltage V (BR)CEO IC = 50mA, RBE = Infinity
http://malzev.tripod.com/comp/2sc1970.htm
7/10/2008
2SC1970
Page 2 of 2
Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency
V(BR)EBO IE = 1mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 600mW, f = 175MHz
4 10 1 50
50 1,2 60
-
V
100 µA 100 µA 180 W %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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http://malzev.tripod.com/comp/2sc1970.htm
7/10/2008