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TDA8170
TV VERTICAL DEFLECTION OUTPUT CIRCUIT
. . . .
The functions incorporated are : POWER AMPLIFIER FLYBACK GENERATOR REFERENCE VOLTAGE THERMAL PROTECTION DESCRIPTION The TDA8170 is a monolithic integrated circuit in HEPTAWATTTM package. It is a high efficiency power booster for direct driving of vertical windings of TV yokes. It is intended for use in Colour and B & W television receivers as well as in monitors and displays. PIN CONNECTIONS
7 6 5 4 3 2 1 Ta b connected to Pin 4 REFERENCE VOLTAGE AND NON-INVERTING INPUT OUTPUT STAGE S UPPLY OUTPUT GROUND FLYBACK GENERATOR SUPP LY VOLTAGE INVERTING INPUT
HEPTAWATT (Plastic Package) ORDER CODE : TDA8170
BLOCK DIAGRAM
+ VS
2
6
3
FLYBACK GENERATOR REFERE NCE VOLTAGE
1
P O WER AMPLIFIER
5
7
THERMAL PROTECTION
TDA8170
4
YOKE
May 1996
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8170-02.EPS
8170-01.EPS
TDA8170
SCHEMATIC DIAGRAM
5 2 D4 Q11 C1 Q10 7 Q7 1 Q1 Q2 Q4 D1 R6 Q5 Q3 Q16 R1 D2 Q19 R2 R3 R7 R8 R9 Q14 Q15 Q17 Q22 Q18 R11 Q6 D6 Q8 Q9 D7 Q13 D3 R4 D5 R5 D8 Q20 Q21 3 D9 Q12 R10 6
C2 R12 Q24 Z1 Q25 R13 R14 Q27 Q28 Q29 R15 4 R19 R16 R17 R18
8170-03.EPS
Q23
Q26 Z2
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TDA8170
ABSOLUTE MAXIMUM RATINGS
Symbol VS V5 , V6 V3 V1 , V7 Io Io Io I3 I3 Ptot Tstg, Tj Supply Voltage (pin 2) Flyback Peak Voltage Voltage at Pin 3 Amplifier Input Voltage Output Peak Current (non repetitive, t = 2 msec) Output Peak Current at f = 50 or 60 Hz, t 10 µsec Output Peak Current at f = 50 or 60 Hz, t > 10 µsec Pin 3 DC Current at V5 < V2 Pin 3 Peak to Peak Flyback Current at f= 50 or 60 Hz, tfly 1.5msec Total Power Dissipation at Tcase = 90 °C Storage and Junction Temperature Parameter Value 35 60 + Vs + Vs 0.5 2.5 3 2 100 3 20 40 to 150 V A A A mA W °C
8170-01.TBL
Unit V V
A
THERMAL DATA
Symbol R th jcase Parameter Thermal Resistance Junction-case Max. Value 3 Unit °C/W
8170-02.TBL 8170-03.TBL
ELECTRICAL CHARACTERISTICS (refer to the test circuits, VS = 35V, Tamb = 25oC unless otherwise specified)
Symbol I2 I6 I1 V7 V7 VS V3L V5 V5L V5H Tj Parameter Pin 2 Quiescent Current Pin 6 Quiescent Current Amplifier Input Bias Current Reference Voltage Reference Voltage Drift versus Supply Voltage Pin 3 Saturation Voltage to GND Quiescent Output Voltage Output Saturation Voltage to GND Output Saturation Voltage to Supply Junction Temperature for Thermal Shut Down Vs = 15 to 30 V I3 = 20 mA Vs = 35 V , Ra = 39 k Vs = 15 V , Ra = 13 k I5 = 1.2 A I5 = 0.7 A I5 = 1.2 A I5 = 0.7 A Test Conditions I3 = 0, I5 = 0 I3 = 0, I5 = 0 V1 = 1 V Min. Typ. Max. 8 16 0.1 2.2 1 1 18 7.5 1 0.7 1.6 1.3 140 1.4 1 2.2 1.8 2 16 36 1 Unit mA mA µA V mV/V V V V V V V V °C Fig. 1a 1a 1a 1a 1a 1c 1d 1d 1c 1c 1b 1b
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TDA8170
Figure 1a : Measurement of I1, I2, I6, V7, V7/VS
VS I2 2 6 5 10k S1 1 7 V7 4 b I1
8170-04.EPS
Figure 1b : Measurement of V5H
I6
VS 2 6 V 5H 1 1V 4 I5
8170-05.EPS
5
a
1V
S1 : (a) I2 and I6 ; (b) I1
Figure 1c : Measurement of V3L, V5L
VS I 3 or I 5 2 6 3 b 1 3V 5 4 V 3L V5L
8170-06.EPS
Figure 1d : Measurement of V5
VS 2 6
S1
12k
a
2V
1
5
4 R
V5
a
S1 : (a) V3L ; (b) V5L
Figure 2 :
AC Test Circuit
1N4001
VS
C1
0.1µF
C2
470µ F
D1
C3
220µ F
t fly
2 7
6
3 Iy
V7
to Ly 24.6mH
*
GND
Vi
R1 1
10k
TDA8170
4
5 C4 0.22µF R7 1.5 R4 R6 330
to
RT1
4.7k
R3 IN R2 5.6k
12k
Ry 9.6
C6
4.7µF
8.2k
C5 2200µF R5 Iy
8170-08.EPS
* Recommended for
VRE F noise filtering
R5 1
to
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8170-07.EPS
5.6k
TDA8170
Figure 3 : PC Board and Component layout of the Circuit of fig. 2(1 : 1 scale)
TDA8170
C1 C5 D1 R1 R7 R3 R4 R6 C3
C2
C6 R11
R5
R2
GND
VS
YOKE YOKE GND ( VO )
V7
IN
COMPONENTS LIST FOR TYPICAL APPLICATIONS
Component RT1 R1 R2 R3 R4 R5 R6 R7 D1 C1 C2 eI. C3 eI. C4 C5 eI. C6 eI. 110 ° TVC 5.9 /10 mH 1.95 App 10 12 10 27 12 0.82 270 1.5 1N 4001 0.1 1000/25 V 220/25 V 0.22 200/25 V 4.7/16 V 110 ° TVC 9.6 /24.6 mH 1.2 App 4.7 10 5.6 12 8.2 1 330 1.5 1N 4001 0.1 470/25 V 220/25 V 0.22 2200/25 V 4.7/16 V 90 ° TVC 15 /30 mH 0.82 App 10 12 5.6 18 5.6 1 330 1.5 1N 4001 0.1 470/25 V 220/25 V 0.22 1000/16 V 10/16 V Unit k k k k k µF µF µF µF µF
8170-04.TBL
µF
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8170-09.EPS
TDA8170
TYPICAL PERFORMANCES
Parameter Vs - Supply Voltage Is - Current tfly - Flyback Time Ptot - Power Dissip. Rth o-a - Heatsink Tamb Tj max To VI V7 110 ° TVC 5.9 /10 mH 24 280 0.6 4.2 7 60 110 20 2.5 2.5 110 ° TVC 9.6 /27 mH 22.5 175 1 2.5 13 60 110 20 2.5 2.5 90 ° TVC 15 /30 mH 25 125 0.7 2.05 16 60 110 20 2.5 2.5 Unit V mA ms W °C/W °C °C Vpp Vp
8170-05.TBL 8170-10.EPS
ms
MOUNTING INSTRUCTIONS The power dissipated in the circuit must be removed by adding an external heatsink. Thanks to the HEPTAWATTTM package attaching the heatsink is very simple, a screw a compression Figure 4 : Mounting Examples spring (clip) being sufficient. Between the heatsink and the packageit is betterto inserta layer of silicon grease, to optimize the thermal contact ; no electrical isolation is needed between the two surfaces.
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TDA8170
PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWATT
Dimensions A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia.
Min.
Millimeters Typ.
2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62
Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4
Min.
Inches Typ.
0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300
Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409
3 15.8 6.6
0.102 0.594 0.236 0.110 0.200
0.118 0.622 0.260
HEPTV.TBL
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1996 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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PM-HEPTV.EPS