Text preview for : 2SD2494.pdf part of Sanken 2SD2494 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625)



Back to : 2SD2494.pdf | Home

Equivalent circuit

C

Darlington

2SD2494
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=­0.5A VCB=10V, f=1MHz 2SD2494 100max 100max 110min 5000min 2.5max 3.0max 60typ 55typ V V
16.2

B

(7 0 )

E

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2494 110 110 5 6 1 60(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit

External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6

µA
23.0±0.3

V

9.5±0.2

µA

a b

MHz pF

1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1

3.3

0.8

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL () 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) ­5 IB1 (mA) 5 IB2 (mA) ­5 ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ

3.35

B

C

E

Weight : Approx 6.5g a. Type No. b. Lot No.

I C ­ V CE Characteristics (Typical)
A 1m

V CE ( sat ) ­ I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3

I C ­ V BE Temperature Characteristics (Typical)
6 (V CE =4V)

6
5mA

0.

5m

A

0. 4m A

0.3 mA

Collector Current I C (A)

4
0.2mA

Collector Current I C (A)

2

4

mp)

I C =5A

p)

2

Cas

1 I C =3A

2

e Tem

°C (

25°C

I B =0.1mA

0

0

2

4

6

0

0.1

0.5

1

5

10

50

100

0

0

1

­30°C

125

(Case

(Cas

Temp

e Te

)

2

3.0

2.5

Collector-Emitter Voltage V C E (V)

Base Current I B (mA)

Base-Emittor Voltage V B E (V)

h FE ­ I C Characteristics (Typical)
(V C E =4V) 40000 DC C urrent G ain h FE

h FE ­ I C Temperature Characteristics (Typical)
(V C E =4V) 40000 DC Cur rent Gain h F E

j - a (° C/W)

j-a ­ t Characteristics
5

Typ
10000 5000

10000 5000

125°C 25°C

1000 500 ­30°C

Transient Thermal Resistance

1

1000 500 200 0.02

0.5 1 5 10 50 100 Time t(ms) 500 1000 2000

0.1

0.5

1

5 6

100 0.02

0.1

0.5

1

56

Collector Current I C (A)

Collector Current I C (A)

f T ­ I E Characteristics (Typical)
(V C E =12V) 80 20

Safe Operating Area (Single Pulse)
60

P c ­ T a Derating

Typ

10 5
10

60 Co lle ctor Cu rren t I C (A)

M aximu m Power Dissipa tion P C (W)

10

Cu t-of f Fr eque ncy f T (MH Z )

W

m

D

ith

s

C

0m s

40

In fin ite he

40

1 0.5 Without Heatsink Natural Cooling 0.1

at si nk

20

20

Without Heatsink 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150

0 ­0.02

­0.1

­1

­6

0.05 3

Emitter Current I E (A)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(°C)

154