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KSC5027

KSC5027
High Voltage and High Reliability
· High Speed Switching · Wide SOA

1

TO-220 2.Collector 3.Emitter

1.Base

NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 3 10 1.5 50 150 - 55 ~ 150 Units V V V A A A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.2A VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200 60 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA

hFE Classification
Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

KSC5027

Typical Characteristics
4.0 3.6

1000

VCE = 5V

IC[A], COLLECTOR CURRENT

3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 5 6 7 8

hFE, DC CURRENT GAIN

100

IB IB IB IB

= 250mA = 200mA = 150mA = 100mA IB = 80mA IB = 60mA IB = 50mA IB = 40mA IB = 30mA IB = 20mA IB = 10mA IB = 0
9 10

10

1 0.01

0.1

1

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10

4.0

IC = 5 IB
3.5

VCE = 5V

IC[A], COLLECTOR CURRENT
1 10

3.0

1

V BE(sat)

2.5

2.0

0.1

V CE(sat)

1.5

1.0

0.5

0.01 0.01

0.1

0.0 0.0

0.2

0.4

0.6

0.8

1.0

1.2

IC[A], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

10

100

tSTG

VCC = 400V 5.IB1 = -2.5.IB2 = IC

ICMAX.(Pulse)

IC[A], COLLECTOR CURRENT

10

tON, tSTG, tF [µ s], TIME

ICMAX(Continuous)
1

m 10

10

1

1m s



tON tF

DC

s

s

0.1

0.1

0.01

0.01 0.1

1E-3 1 10 1 10 100 1000 10000

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Switching Time

Figure 6. Safe Operating Area

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

KSC5027

Typical Characteristics (Continued)

100

80

IB2 = -0.3A
70

IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

10

60

50

1

40

30

0.1

20

10

0.01 10 100 1000 10000

0 0 25 50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 7. Reverse Bias Operating Area

Figure 8. Power Derating

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

KSC5027

Package Demensions

TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10

4.50 ±0.20

(8.70) ø3.60 ±0.10

(1.70)

1.30 ­0.05

+0.10

9.20 ±0.20

(1.46)

13.08 ±0.20

(1.00)

(3.00)

15.90 ±0.20

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]

10.08 ±0.30

18.95MAX.

(3.70)

(45° )

0.50 ­0.05

+0.10

2.40 ±0.20

10.00 ±0.20

Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST® OPTOPLANARTM

ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM

FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM

PACMANTM POPTM Power247TM PowerTrench® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER® SMART STARTTM

StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET® VCXTM

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

©2001 Fairchild Semiconductor Corporation

Rev. H3