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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-126 Plastic-Encapsulate Transistors
3DD13002 TRANSISTOR£¨NPN £© TO¡ª
126
FEATURES
Power dissipation
PCM : 1.25 W£¨ Tamb=25¡æ£©
1.BASE
Collector current
ICM : 1 A 2.COLLECTOR
Collector-base voltage
3.EMITTER 123
V(BR)CBO : 600 V
Operating and storage junction temperature range
T J £¬ T stg: -55¡æto +150¡æ
ELECTRICAL CHARACTERISTICS£¨
Tamb=25¡æ unless otherwise specified£©
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100¦ÌA£¬IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA£¬ IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 100¦ÌA£¬IC=0 6 V
Collector cut-off current ICBO VCB= 600 V£¬IE=0 100 µA
Emitter cut-off current IEBO VEB= 6 V£¬IC=0 100 µA
hFE£¨£©
1 VCE= 10 V, IC= 250 µA 5
DC current gain
hFE£¨£©
2 VCE= 10 V, IC= 200 m A 9 40
Collector-emitter saturation voltage VCE(sat) IC=200m A, IB= 40 m A 0.8 V
Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40 m A 1.1 V
VCE=10V, Ic=100mA
Transition frequency fT 5 MHz
f =1MHz
Fall time tf IC=1A, I 1=-IB2=0.2A
B 0.5 µs
Storage time ts VCC=100V 2.5 µs
CLASSIFICATION OF h FE(2)
Rank
Range 9-15 15-20 20-25 25-30 30-35 35-40
TO-126 PACKAGE OUTLINE DIMENSIONS
A
D A1
¦Õ
P
E
L1
b1
L
b
e C
e1
Dimensions In Millimeters Dimensions In Inches
Symbol
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290TYP 0.090TYP
e1 4.480 4.680 0.176 0.184
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
¦Õ 3.000 3.200 0.118 0.126