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Package name: LDPAK( L,S)
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2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
REJ03G0897-0300 (Previous: ADE-208-633A) Rev.3.00 Sep 07, 2005
Description
High speed power switching
Features
· Low on-resistance RDS (on) = 0.075 typ. · Low drive current. · 4 V gate drive devices. · High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
D
G 1 1 2 3 S 2 3
Rev.3.00 Sep 07, 2005 page 1 of 8
2SJ550(L), 2SJ550(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg 50 Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 60 ±20 15 60 15 15 19 50 150 55 to +150
Unit V V A A A A mJ W °C °C
IAP Note 3 EAR Pch Tch
Note 2
Note 3
Tstg
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 60 ±20 -- -- 1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.105 11 850 420 110 12 75 125 75 1.1 70 Max -- -- 10 ±10 2.0 0.095 0.155 -- -- -- -- -- -- -- -- -- -- Unit V V µA µA V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 8 A, VGS = 10 V ID = 8 A, VGS = 4 V Note 4 ID = 8 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V ID = 8 A RL = 3.75 IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 diF/dt = 50 A/µs
Note 4
Rev.3.00 Sep 07, 2005 page 2 of 8
2SJ550(L), 2SJ550(S)
Main Characteristics
Power vs. Temperature Derating
80 1000 300
Maximum Safe Operation Area
Pch (W)
ID (A)
60
100 30 10 3 1 0.3
PW
10 µs
0 µs 1 =1 m s 0m Op s( era 1s tio ho n( t) Tc Operation in =2 this area is 5° C) limited by RDS (on) 10
Channel Dissipation
Drain Current
40
DC
20
Ta = 25°C 0 0 50 100 150 200 0.1 0.1 0.3 1 3 10 30 100
Case Temperature
Tc (°C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20 10 V 6 V 20 4 V Pulse Test 3.5 V 12
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
16
ID (A) Drain Current
16
12
Drain Current
8
3 V
8 25°C 4 Tc = 75°C 25°C
4 VGS = 2.5 V 0 0 2 4 6 8 10
0
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
4.0 Pulse Test 3.2
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance RDS (on) ()
10 Pulse Test 3 1 0.3 VGS = 4 V 0.1 0.03 0.01 0.1 0.3 10 V
2.4
1.6 ID = 15 A 0.8 10 A 5 A 0 4 8 12 16 20
0
1
3
10
30
100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.3.00 Sep 07, 2005 page 3 of 8
2SJ550(L), 2SJ550(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) ()
0.40 Pulse Test 0.32 5 A 0.24 VGS = 4 V 10 A ID = 15 A 100 30 Tc = 25°C 10 3 75°C 1 0.3 0.1 0.1 25°C
Forward Transfer Admittance vs. Drain Current
0.16
0.08 10 V 0 40 0 40 5 A, 10 A, 15 A 80 120 160
VDS = 10 V Pulse Test 0.3 1 3 10 30 100
Case Temperature
Tc (°C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 3000
Body-Drain Diode Reverse Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50
1000 300 100
Ciss
Coss
20 10 5 0.1 0.2 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.5 1 2 5 10 20
Crss 30 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
VDD = 10 V 25 V 50 V
Switching Characteristics
VGS (V)
0 1000 500 VGS = 10 V, VDD = 30 V PW = 5 µs, duty 1 %
0
20
4
Drain to Source Voltage
Gate to Source Voltage
Switching Time t (ns)
40 VDS 60 VDD = 50 V 25 V 10 V
VGS
8
200 100 50 tr 20
td(off) tf
12
80 ID = 15 A 0 8 16 24 32
16
td(on) 10 0.1 0.2 0.5 1 2 5 10 20
100
20 40
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 8
2SJ550(L), 2SJ550(S)
Reverse Drain Current vs. Source to Drain Voltage
20
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
20 IAP = 15 A VDD = 25 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
16 10 V 5 V 8 VGS = 0, 5 V
16
12
12
8
4 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0
4
0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25°C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch c (t) = s (t) · ch c ch c = 2.5°C/W, Tc = 25°C PDM
pu lse
0.02
0.03
0.0
1s
D= PW T
PW T
1
t ho
0.01 10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform 1 · L · IAP2 · 2 VDSS VDSS VDD
V(BR)DSS IAP VDD ID VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D.U.T
Vin 15 V
50 VDD
0
Rev.3.00 Sep 07, 2005 page 5 of 8
2SJ550(L), 2SJ550(S)
Switching Time Test Circuit
Vin Vin Monitor D.U.T. RL 90% Vin 10 V 50 VDD = 30 V Vout td(on) 10% tr td(off) 10% tf 90% 90% Vout Monitor 10%
Waveform
Rev.3.00 Sep 07, 2005 page 6 of 8
2SJ550(L), 2SJ550(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Package Name LDPAK(L) / LDPAK(L)V
MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 ± 0.2 10.2 ± 0.3 1.3 ± 0.15
11.3 ± 0.5 0.3 10.0 + 0.5
8.6 ± 0.3
1.3 ± 0.2 1.37 ± 0.2
0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5
11.0 ± 0.5
0.2 0.86 + 0.1
2.49 ± 0.2
0.4 ± 0.1
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Package Name LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 ± 0.2 10.2 ± 0.3
(1.4)
8.6 ± 0.3
+ 0.3 0.5
10.0
(1.5)
(1.5)
2.49 ± 0.2 0.2 0.1 + 0.1
7.8 7.0
2.2
1.37 ± 0.2 1.3 ± 0.2 2.54 ± 0.5
0.3 3.0 + 0.5
0.2 0.86 + 0.1
0.4 ± 0.1
2.54 ± 0.5
Rev.3.00 Sep 07, 2005 page 7 of 8
1.7
1.3 ± 0.15
7.8 6.6
2SJ550(L), 2SJ550(S)
Ordering Information
Part Name 2SJ550L-E 2SJ550STL-E 500 pcs 1000 pcs Quantity Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Sep 07, 2005 page 8 of 8
Sales Strategic Planning Div.
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Colophon .3.0