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PMBD914
Single high-speed switching diode
Rev. 06 -- 11 February 2009 Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number[1] Package
NXP JEDEC
PMBD914 SOT23 TO-236AB
PMBD914/DG
[1] /DG: halogen-free
1.2 Features
I High switching speed: trr 4 ns I Low capacitance: Cd 1.5 pF
I Low leakage current I Reverse voltage: VR 100 V
I Repetitive peak reverse voltage: I Small SMD plastic package
VRRM 100 V
1.3 Applications
I High-speed switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IF forward current [1] - - 215 mA
VR reverse voltage - - 100 V
trr reverse recovery time [2] - - 4 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
NXP Semiconductors PMBD914
Single high-speed switching diode
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 anode
3 3
2 not connected
1 2
3 cathode
006aaa764
1 2
3. Ordering information
Table 4. Ordering information
Type number[1] Package
Name Description Version
PMBD914 - plastic surface-mounted package; 3 leads SOT23
PMBD914/DG
[1] /DG: halogen-free
4. Marking
Table 5. Marking codes
Type number Marking code[1]
PMBD914 *5D
PMBD914/DG YB*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse - 100 V
voltage
VR reverse voltage - 100 V
IF forward current [1] - 215 mA
IFRM repetitive peak forward - 500 mA
current
IFSM non-repetitive peak forward square wave [2]
current tp = 1