Text preview for : TDA1562Q_N_1.pdf part of phillips tda1562 Audio Power amp, 55W rms @4Ohms. 12Vdc power supply



Back to : TDA1562Q_N_1.pdf | Home

INTEGRATED CIRCUITS

DATA SHEET

TDA1562Q 70 W high efficiency power amplifier with diagnostic facility
Preliminary specification File under Integrated Circuits, IC01 1998 Apr 07

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
FEATURES · Very high output power, operating from a single low supply voltage · Low power dissipation, when used for music signals · Switches to low output power at too high case temperatures · Few external components · Fixed gain · Differential inputs with high common mode rejection · Mode select pin (on, mute and standby) · Status I/O pin (class-H, class-B and fast mute) · All switching levels with hysteresis · Diagnostic pin with information about: ­ Dynamic Distortion Detector (DDD) ­ Any short-circuit at outputs ­ Open load detector ­ Temperature protection. · No switch-on or switch-off plops GENERAL DESCRIPTION · Fast mute on supply voltage drops

TDA1562Q

· Quick start option (e.g. car-telephony/navigation) · Low (delta) offset voltage at the outputs · Load dump protection · Short-circuit safe to ground, supply voltage and across the load · Low power dissipation in any short-circuit condition · Protected against electrostatic discharge · Thermally protected · Flexible leads.

The TDA1562Q is a monolithic integrated 70 W/4 Bridge-Tied Load (BTL) class-H high efficiency power amplifier in a 17-lead DIL-bent-SIL plastic power package. The device can be used for car audio systems (e.g. car, radio and boosters) as well as mains fed applications (e.g. midi/mini audio combinations and TV sound).

QUICK REFERENCE DATA Test conditions: VP = 14.4 V; RL = 4 ; Rs = 0 ; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL VP PARAMETER supply voltage CONDITIONS operating non-operating load dump Iq(tot) Istb VOO VOO Gv Zi(dif) Po THD total quiescent current standby current output offset voltage delta output offset voltage voltage gain differential input impedance output power total harmonic distortion THD = 0.5% THD = 10% Po = 1 W Po = 20 W DDD active SVRR CMRR ISRR Vn(o) supply voltage ripple rejection common mode rejection ratio input signal rejection ratio noise output voltage on and mute on mute on on and mute; RL = open circuit standby on and mute on mute 8 - - - - - - 25 90 45 60 - - - 60 70 80 - MIN. - - 110 1 - - 26 150 55 70 0.03 0.06 10 70 80 90 100 TYP. 14.4 MAX. 18 30 45 150 50 100 30 27 - - - - - - - - - 150 V V V mA µA mV mV dB k W W % % % dB dB dB µV UNIT

1998 Apr 07

2

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA1562Q BLOCK DIAGRAM DBS17P DESCRIPTION

TDA1562Q

VERSION SOT243-1

plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

handbook, full pagewidth

C1- 3 CLASS-B CLASS-H FAST MUTE STANDBY MUTE ON

C1+ 5

VP1 9

VP2 10

status I/O

16

TEMPERATURE SENSOR

LOAD DUMP PROTECTION

mode select

4

disable LIFT-SUPPLY

CURRENT PROTECTION

VP* IN+ 1 + PREAMP - POWERSTAGE DIAGNOSTIC INTERFACE FEEDBACK CIRCUIT 75 k IN- 2 7 OUT+

75 k

TDA1562Q

LOAD DETECTOR

DYNAMIC DISTORTION DETECTOR

8

diagnostic

- PREAMP +

POWERSTAGE VP* LIFT-SUPPLY TEMPERATURE PROTECTION

11

OUT-

Vref

14 15 k disable

signal 17 GND

reference voltage

MGL264

15 C2-

13 C2+

6 PGND1

12 PGND2

Fig.1 Block diagram.

1998 Apr 07

3

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
PINNING SYMBOL IN+ IN- C1- MODE C1+ PGND1 OUT+ DIAG VP1 VP2 OUT- PGND2 C2+ Vref C2- STAT SGND PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DESCRIPTION signal input (positive) signal input (negative) negative terminal of lift electrolytic capacitor 1 mode select input positive terminal of lift electrolytic capacitor 1 power ground 1 positive output diagnostic output (open collector) supply voltage 1 supply voltage 2 negative output power ground 2 positive terminal of lift electrolytic capacitor 2 internal reference voltage negative terminal of lift electrolytic capacitor 2 status I/O signal ground
OUT+ 7 DIAG 8 VP1 9 VP2 10 OUT- 11 PGND2 12 C2+ 13 Vref 14 C2- 15 STAT 16 SGND 17
MGL263

TDA1562Q

handbook, halfpage

IN+ 1 IN- 2 C1- 3 MODE 4 C1+ 5 PGND1 6

TDA1562Q

Fig.2 Pin configuration.

1998 Apr 07

4

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
FUNCTIONAL DESCRIPTION The TDA1562Q contains a mono class-H BTL output power amplifier. At low output power, up to 18 W, the device operates as a normal BTL amplifier. When a larger output voltage swing is required, the internal supply voltage is lifted by means of the external electrolytic capacitors. Due to this momentarily higher supply voltage the obtainable output power is 70 W. In normal use, when the output is driven with music-like signals, the high output power is only needed during a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution, the reduction in dissipation is about 50% when compared to a class-B output amplifier with the same output power. The heatsink should be designed for use with music signals. If the case temperature exceeds 120 °C, the device will switch back from class-H to class-B operation. The high power supply voltage is then disabled and the output power is limited to 20 W. When the supply voltage drops below the minimum operating level, the amplifier will be muted immediately. Mode select input (pin MODE) This pin has 3 modes: 1. LOW, `standby': the complete circuit is switched off, the supply current is very low 2. MID, `mute': the circuit is switched on, but the input signal is suppressed 3. HIGH, `on': normal operation, the input signal is amplified by 26 dB. When the circuit is switched from mute to on or vice versa the actual switching takes place at a zero crossing of the input signal. The circuit contains a quick start option, i.e. when it is switched directly from standby to on, the amplifier is fully operational within 50 ms (important for applications like car telephony and car navigation). Status I/O input (pin STAT) INPUT This input has 3 possibilities:

TDA1562Q

1. LOW, `fast mute': the circuit remains switched on, but the input signal is suppressed 2. MID, `class-B': the circuit operates as class-B amplifier, the high power supply voltage is disabled, independent of the case temperature 3. HIGH, `class-H': the circuit operates as class-H amplifier, the high power supply voltage is enabled, independent of the case temperature. When the circuit is switched from fast mute to class-B/H or vice versa the switching is immediately carried out. When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. OUTPUT This output has 3 possibilities: 1. LOW, `mute': acknowledge of muted amplifier 2. MID, `class-B': the circuit operates as class-B amplifier, the high power supply voltage is disabled, caused by the case temperature Tc > 120 °C 3. HIGH, `class-H': the circuit operates as class-H amplifier, the high power supply voltage is enabled, because the case temperature Tc < 120 °C. When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. The status I/O pins of maximum 8 devices may be tied together for synchronizing purposes.

1998 Apr 07

5

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q

handbook, full pagewidth

on mute 0 HIGH

supply voltage

mode select input

MID LOW Vref

reference voltage

VRT 0 HIGH

status I/O input

MID LOW HIGH

status I/O output

MID LOW

class-H (Tc < 120 °C) class-B (Tc > 120 °C)

output voltage across load

0

quick start mute

zerocross change class B/H-operation

fast mute function

zerocross mute function

supply mute function
MGL272

Fig.3 Switching characteristics.

1998 Apr 07

6

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
Diagnostic output (pin DIAG) DYNAMIC DISTORTION DETECTOR (DDD) At the onset of clipping of the output stages, the DDD becomes active. This information can be used to drive a sound processor or DC-volume control to attenuate the input signal and so limit the distortion. SHORT-CIRCUIT PROTECTION When a short-circuit occurs at the outputs to ground or to the supply voltage, the output stages are switched off. They will be switched on again approximately 20 ms after removing the short-circuit. During this short-circuit condition the diagnostic output is continuously LOW. When a short-circuit occurs across the load, the output stages are switched off during approximately 20 ms. After that time is checked during approximately 50 µs whether the short-circuit is still present. During this short-circuit condition the diagnostic output is LOW for 20 ms and high for 50 µs. The power dissipation in any short-circuit condition is very low. TEMPERATURE DETECTION

TDA1562Q

Just before the temperature protection becomes active the diagnostic output becomes continuously LOW. Load detection: directly after the circuit is switched from standby to mute or on, a build in detection circuit checks whether a load is present. The results of this check can be detected at the diagnostic output, by switching the mode select input in the mute mode. Since the diagnostic output is an open collector output, more devices can be tied together.

HIGH
handbook, full pagewidth

mode select input

MID

LOW

output voltage across load

0

HIGH

diagnostic output no load LOW t clipping signal short-circuit to supply or ground short-circuit across load
MGL265

Fig.4 Diagnostic information.

1998 Apr 07

7

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q

handbook, full pagewidth

class-H

status I/O: high

maximum output voltage swing

class-B

status I/O: open

0 HIGH

diagnostic output

LOW

HIGH

status I/O output

MID

LOW 100

120

145

150 Tj (°C)

160
MGL266

Fig.5 Behaviour as a function of temperature.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP PARAMETER supply voltage CONDITIONS operating non-operating load dump; tr > 2.5 ms; T = 50 ms IOSM Vsc Tstg Tamb Tj Ptot Note 1. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device. Tj = Tc + P × Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 747-1). non-repetitive peak output current repetitive peak output current short-circuit safe voltage storage temperature ambient temperature junction temperature total power dissipation note 1 - - - - - - -55 -40 - - MIN. MAX. 18 30 45 10 8 18 +150 - 150 60 V V V A A V °C °C °C W UNIT

1998 Apr 07

8

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER thermal resistance from junction to case thermal resistance from junction to ambient in free air CONDITIONS 1.5 40 VALUE

TDA1562Q

UNIT K/W K/W

DC CHARACTERISTICS VP = 14.4 V; RL = 4 ; Tamb = 25 °C; measurements in accordance with Fig.10; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies VP1 and VP2 (pins 9 and 10) VP Vth+ Vth- VPH1 Iq Istb VO VOO VOO VI II Vth1+ Vth1- VmsH1 Vth2+ Vth2- VmsH2 supply voltage supply threshold voltage supply threshold voltage hysteresis (Vth+ - Vth-) quiescent current standby current on and mute; RL = open circuit standby mute on on mute 8 - 7 - - - - - - 14.4 - - 200 110 1 18 9 - - 150 50 - 100 30 V V V mV mA µA

Amplifier outputs OUT+ and OUT- (pins 7 and 11) DC output voltage output offset voltage delta output offset voltage on and mute on and mute on mute 6.5 - - - - - - 200 - - 200 V mV mV

Mode select input MODE (pin 4) input voltage range input current threshold voltage threshold voltage hysteresis (Vth1+ - Vth1-) threshold voltage threshold voltage hysteresis (Vth2+ - Vth2-) mute on on mute VMODE = 14.4 V standby mute mute standby 0 - - 1 - - 3.3 - Vp 20 2 - - 4.2 - - V µA V V mV V V mV

Status I/O STAT (pin 16) PIN STAT AS INPUT Vst IstH IstL Vth1+ Vth1- VstH1 Vth2+ Vth2- VstH2 1998 Apr 07 input voltage HIGH-level input current LOW-level input current threshold voltage threshold voltage hysteresis (Vth1+ - Vth1-) threshold voltage threshold voltage hysteresis (Vth2+ - Vth1-) 9 class B class H class H class B VSTAT = 14.4 V VSTAT = 0 V fast mute class B class B fast mute 0 - - - 1 - - 3.3 - - - - - - 200 - - 200 VP 4 -400 2 - - 4.2 - - V mA µA V V mV V V mV

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
SYMBOL PIN STAT AS OUTPUT Ist(mute) Vst(mute) Ist(clB) Vst(clB) Ist(clH) Vst(clH) Tc(th) VDIAG RL Tj(th) mute acknowledge sink current mute acknowledge output voltage class B operation output current class B operation output voltage class H operation source current class H operation output voltage threshold case temperature sensor Ist = -140 µA IIst = 15 µAI Ist = 2.2 mA 2.2 - 15 2.0 -140 - - 100 - - - - - - 120 - - 145 PARAMETER CONDITIONS MIN. TYP.

TDA1562Q

MAX. - 0.5 - 3.0 - - -

UNIT

mA V µA V µA V °C

VP - 2.5 -

Diagnostic output DIAG (pin 8) output voltage load resistance for open load detection threshold junction temperature sensor active LOW 0.6 - - V °C

1998 Apr 07

10

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q

handbook, full pagewidth

on-mode

fast mute VPH1 Vth- Vth+ VP
MGL267

Fig.6 Supply voltage transfer characteristic.

handbook, full pagewidth

on-mode

mute

standby VmsH1 Vth1- Vth1+ VmsH2 Vth2- Vth2+
MGL268

Vms

Fig.7 Mode select transfer characteristic.

handbook, full pagewidth

class-H

class-B

fast mute VstH1 Vth1- Vth1+ VstH2 Vth2- Vth2+
MGL269

Vst

Fig.8 Status I/O transfer characteristic.

1998 Apr 07

11

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q

AC CHARACTERISTICS VP = 14.4; RL = 4 ; Rs = 0 ; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.10; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS class-B; THD = 10% class-H; THD = 10% class-H; THD = 0.5% fro(h)(P) THD high frequency power roll-off total harmonic distortion Po (-1 dB); THD = 0.5%; note 1 Po = 1 W Po = 20 W DDD active Gv fro(h)(G) Zi(dif) SVRR voltage gain high frequency gain roll-off differential input impedance supply voltage ripple rejection common mode rejection ratio input signal rejection ratio noise output voltage on and mute; note 3 standby; note 3 CMRR ISRR Vn(o) on; note 4 mute; note 5 on; note 6 mute; notes 6 and 7 Notes 1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors. 2. The low frequency gain roll-off is determined by the value of the input coupling capacitors. 3. Supply voltage ripple rejection is measured across RL; Vripple = Vripple max. = 2 VPP. 4. Common mode rejection ratio is measured across RL; Vcm = Vcm max. = 2 VPP. CMMR [dB] = differential gain (Gv) + common mode attenuation (Ac), (Test setup according Fig. 9; mismatch of input coupling capacitors excluded). 5. Input signal rejection ratio is measured across RL; Vi = Vi(max) = 2 VPP. ISSR [dB] = different gain (Gv) + mute attenuation (Am) 6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz. 7. Noise output voltage is independent of source impedance Rs. 70 80 - - Gv (-1 dB); note 2 16 60 45 - - - - 25 20 90 60 MIN. 20 70 55 20 0.03 0.06 10 26 - 150 70 90 80 90 100 60 TYP. - - - - - - - 27 - - - - - - 150 - MAX. W W W kHz % % % dB kHz k dB dB dB dB µV µV UNIT

1998 Apr 07

12

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility

TDA1562Q

handbook, full pagewidth

+ VP 9 Ci supply 1 7 10

Ci VCM

TDA1562
2 14 SGND 17 PGND1 PGND2 6 12 11

RL

GND
MGL270

Fig.9 CMRR test setup.

QUALITY SPECIFICATION Quality in accordance with "SNW-FQ-611 part E", if this type is used as an audio amplifier.

1998 Apr 07

13

This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 1998 Apr 07
C1- 3 CLASS-B CLASS-H FAST MUTE STANDBY MUTE ON status I/O 16 TEMPERATURE SENSOR mode select 4 disable LIFT-SUPPLY 100 nF 1 IN+ 1/2*Rs audio source 1/2*Rs 100 nF 2 IN- 10 µF 14 Vref 15 k 17 signal GND 15 C2-
handbook, full pagewidth

TEST AND APPLICATION INFORMATION

Philips Semiconductors

70 W high efficiency power amplifier with diagnostic facility

4700 µF C1+ 5 VP1 9

100 nF VP2 10

2200 µF

+ VP

LOAD DUMP PROTECTION

CURRENT PROTECTION

VP* + 75 k - AMP. POWERSTAGE DIAGNOSTIC INTERFACE FEEDBACK CIRCUIT 75 k 7 OUT+ + VP RL = 4

TDA1562Q

LOAD DETECTOR

DYNAMIC DISTORTION DETECTOR

10 k 8 diagnostic 11 OUT-

14

- + AMP.

POWERSTAGE VP* LIFT-SUPPLY TEMPERATURE PROTECTION

disable

reference voltage

13 C2+ PGND1

6

12 PGND2

Preliminary specification

4700 µF

TDA1562Q

GND
MGL271

Fig.10 Test and application circuit.

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

TDA1562Q

SOT243-1

non-concave D x Dh

Eh

view B: mounting base side

d

A2

B j E A

L3

L

Q c v M

1 Z e e1 bp w M

17 m e2

0

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT243-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A 17.0 15.5 A2 4.6 4.2 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.4 x 0.03 Z (1) 2.00 1.45

1.27 5.08

ISSUE DATE 95-03-11 97-12-16

1998 Apr 07

15

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values

TDA1562Q
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.

This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1998 Apr 07

16

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
NOTES

TDA1562Q

1998 Apr 07

17

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
NOTES

TDA1562Q

1998 Apr 07

18

Philips Semiconductors

Preliminary specification

70 W high efficiency power amplifier with diagnostic facility
NOTES

TDA1562Q

1998 Apr 07

19

Philips Semiconductors ­ a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1998

SCA59

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

545102/1200/01/pp20

Date of release: 1998 Apr 07

Document order number:

9397 750 03043