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2SK1070
Silicon N-Channel Junction FET
ADE-208-1175 (Z) 1st. Edition Mar. 2001 Application
Low frequency / High frequency amplifier
Outline
MPAK
3 1 2
1. Drain 2. Source 3. Gate
2SK1070
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings 22 22 50 10 150 150 55 to +150 Unit V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate cutoff current Gate to source breakdown voltage Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Note: Grade Mark I DSS B PIB 6 to 14 C PIC 12 to 22 Symbol I GSS V(BR)GSS I DSS*1 VGS(off) y fs Ciss Min -- 22 6 0 20 -- D PID 18 to 30 Typ -- -- -- -- 30 9 E PIE 27 to 40 Max 10 -- 40 2.5 -- -- Unit nA V mA V mS pF Test conditions VGS = 15 V, VDS = 0 I G = 10 µA, VDS = 0 VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz
1. The 2SK1070 is grouped by I DSS as follows.
See characteristic curves of 2SK435.
2
2SK1070
Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 150
100
50
0
50 100 150 Ambient Temperature Ta (°C)
3
2SK1070
Package Dimensions As of January, 2001
Unit: mm
0.65
0.10 0.4 + 0.05
0.16 0.06
+ 0.10
1.5 ± 0.15
+ 0.2 0.6
0 0.1
0.95
0.95
1.9 ± 0.2 2.95 ± 0.2
0.3
+ 0.2 1.1 0.1
0.65
2.8
Hitachi Code JEDEC EIAJ Mass (reference value)
MPAK -- Conforms 0.011 g
4
2SK1070
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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