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BU806/807
BU806/807
High Voltage & Fast Switching Darlington Transistor
· Using In Horizontal Output Stages of 110° Crt Video Displays ° · BUILT-IN SPEED-UP Diode Between Base and Emitter
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BU806 : BU807 VCEO Collector-Emitter Voltage : BU806 : BU807 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 200 150 6 8 15 2 60 150 - 55 ~150 V V V A A A W °C °C 400 330 V V Value Units
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO (sus) Parameter * Collector-Emitter Sustaining Voltage : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Emitter Cut-off Current * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Damper Diode Forward Voltage Test Condition IC = 100mA, IB = 0 Min. 200 150 100 100 100 100 3 1.5 2.4 2 Max. Units V V µA µA µA µA mA V V V
ICES
VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V VBE = 6V, IC = 0 IC = 5A, IB = 50mA IC = 5A, IB = 50mA IF = 4A
ICEV
IEBO VCE(sat) VBE(sat) VF
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU806/807
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
Ic = 100 IB
hFE, DC CURRENT GAIN
VBE(sat)
100
V CE = 5V V CE = 1.5V
1
V CE(sat)
10 0.1
1
10
0.1 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
10
1000
IC[A], COLLECTOR CURRENT
100
Vf[V], FORWARD VOLTAGE
IC MAX. (Pulse)
10
1ms 10us
500
m 10
1
IC MAX. (DC)
1
us
s
DC
100us
0.1
BU806
0.1 0.1 1 10 0.01 0.01
BU807
0.1 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Damper Diode
Figure 4. Safe Operating Area
80
70
PC[W], POWER DISSIPATION
60
50
40
30
20
10
0 0 50
o
100
150
200
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU806/807
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E