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BU406/406H/408
BU406/406H/408
High Voltage Switching
· Use In Horizontal Deflection Output Stage
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6 7 10 4 60 150 - 55 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A 10 0.75 0.4 0.4 Min. Max. 5 100 1 1 1 1 1 1.2 1.2 1.5 Units mA µA mA mA V V V V V V MHz µs µs µs
IEBO VCE(sat)
Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 Current Gain Bandwidth Product Turn OFF Time : BU406 : BU406H : BU408
VBE(sat)
fT tOFF
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU406/406H/408
Typical Characteristics
5
IB = 2
00m
A
IB =
mA 180 60mA IB = 1
1000
IC[A], COLLECTOR CURRENT
4
A IB = 140m A IB = 120m
VCE = 5V
hFE, DC CURRENT GAIN
10
0m A I B = 10 mA IB = 80 IB = 60 mA
100
3
mA IB = 40
2
IB = 20mA
1
10
0 0 1 2 3 4 5 6 7 8 9
1 1 10 100 1000 10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE
10000
1000
IC = 10 IB
f = 1MHz
1000
VBE (sat)
Cob [pF], CAPACITANCE
100
100
10
VCE(sat)
10 1 10 100 1000 10000
1 1 10 100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
70
IC[A], COLLECTOR CURRENT
PD [W], POWER DISSIPATIOAN
IC Max. (Pulsed)
10
60
IC Max. (Continuous)
50
n io at ip ss Di
s 1m
40
s 0m 10 ited m Li
s m 10
30
1
20
VCE MAX.
d ite im bL S/
10
0 0 25 50
o
0.1 1 10 100
75
100
125
150
175
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU406/406H/408
Typical Characteristics (Continued)
Figure 7. Static Characteristic
Figure 8. DC current Gain
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU406/406H/408
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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©2000 Fairchild Semiconductor International
Rev. E