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DN2535
DN2540
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BVDSX / RDS(ON) IDSS Order Number / Package
BVDGX (max) (min) TO-92 TO-220 TO-243AA*
350V 25 150mA DN2535N3 DN2535N5 --
400V 25 150mA DN2540N3 DN2540N5 DN2540N8
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Product marking for TO-243AA:
Features DN5D
High input impedance Where = 2-week alpha date code
Low input capacitance
Fast switching speeds
Low on resistance
Advanced DMOS Technology
Not recommended for new designs. For products in TO-92
Free from secondary breakdown (N3) package and TO-243AA (N8) package, please use DN3535
Low input and output leakage or DN3545 instead.
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex's
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
Applications bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
Normally-on switches
istic of all MOS structures, these devices are free from thermal
Solid state relays runaway and thermally-induced secondary breakdown.
Converters Supertex's vertical DMOS FETs are ideally suited to a wide range
Linear amplifiers of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
Constant current sources switching speeds are desired.
Power supply circuits
Telecom
Package Options
Absolute Maximum Ratings
D
Drain-to-Source Voltage BVDSX G
D G D
Drain-to-Gate Voltage BVDGX S S
Gate-to-Source Voltage