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CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION
A G R E AT E R M E A S U R E O F C O N F I D E N C E
Learn how to solve today's semiconductor device characterization challenges.
Channel Effective Mobility Technique. .................................................................. 2 Bring wafer level automation to your lab measurements. ................................. 12
Monitor oxide breakdown with confidence. ......................................................... 4 Turnkey systems for lab automation, wafer level reliability, and more. ............. 13
Characterize highly advanced phase change memory devices. .......................... 6 High speed, high integrity switching. ................................................................. 14
Model and monitor Bias Temperature Instability (BTI) for CMOS transistors. ...... 8 Switching and multi-channel measurement. ..................................................... 15
Characterize devices with very low frequency C-V measurements. .................. 10 Contact Us. ......................................................................................................... 16
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CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION
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Accurate Channel Effective Mobility Analysis Using
the Ultra-Fast Single Pulse (UFSP) Technique
The channel effective mobility (eff) influences the MOSFET performance through the carrier
velocity and the driving current. It is one of the key parameters for complementary metal-oxide-
semiconductor (CMOS) technologies. It is widely used for benchmarking differences in technology
development and material selection. It is also a fundamental parameter for device modeling.
With device scaling down to nano-size regime and the introduction of new dielectric materials,
the conventional measurement technique for mobility does not address these issues, leading to
significant measurement errors. As a result, an ultra-fast single pulse technique (UFSP) has been
developed to overcome these shortcomings. Learn more.
Want to learn more?
Illustration of the working principle of UFSP Technique.
Download our free online application note
to learn how to use the UFSP Technique.
Get advice for your application. A comparison of mobility extracted by UFSP and conventional technique
Send us your question or join the discussion on our application forum. for a device with HfO2/SiON dielectric of considerable fast trapping.
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L E A R N H O W T O S O LV E T O D AY ' S M AT E R I A L A N D D E V I C E C H A R A C T E R I Z AT I O N C H A L L E N G E S | A G R E AT E R M E A S U R E O F C O N F I D E N C E
CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION
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A Solution with Everything You Need for Precise,
Expedient, and Easy Mobility Evaluation
Channel carrier mobility is a key parameter for material selection and process development. But, the
conventional technique poses several challenges, such as slow speed and vulnerability to fast trapping,
Vd-dependence, cable-changing, and sensitivity to gate leakage, in addition to being a complex procedure.
But, with the combination of a Keithley's Model 4200-SCS Semiconductor Parameter, two Model
4225-PMU Ultra-Fast I-V modules, and four Model 4225-RPM Remote Amplifier/Switch units,
ultra-fast I-V sourcing and measurement is as easy as making DC measurements with a traditional high
resolution source measure unit (SMU) instrument. This complete solution provides everything needed
for robust and accurate and convenient mobility evaluation, as well as a tool for process development,
material selection, and device modeling for CMOS technologies.
Photo of the UFSP Technique setup using Keithley instruments.
Want to learn more?
Download our free online
application note to learn how to
use the UFSP Technique.
Want assistance, a quote, or to place an order?
Call 1-800-492-1955 and Experiment connection for the Ultra-fast Single Pulse (UFSP) Technique. Two Keithley
n Press 1 to place an order, or email [email protected]. dual-channel Model 4225-PMUs are used for performing transient measurements.
n Press 2 to receive help in selecting a product, or email [email protected]. Four Keithley Model 4225-RPMs are used to reduce cable capacitance effect and
achieve accurate measurement below 100nA.
n Press 3 to receive product pricing or availability. OR Contact us online.
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L E A R N H O W T O S O LV E T O D AY ' S M AT E R I A L A N D D E V I C E C H A R A C T E R I Z AT I O N C H A L L E N G E S | A G R E AT E R M E A S U R E O F C O N F I D E N C E
CHANNEL EFFECTIVE MOBILITY TECHNIQUE | MONITORING OXIDE BREAKDOWN | PCM DEVICES | BTI TESTING | VERY LOW FREQUENCY C-V | LAB-BASED AUTOMATION
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Monitor oxide breakdown with confidence.
Start
Pre-Test
Oxide integrity is an important reliability concern, especially for modern ULSI MOSFET devices, where Force Vuse Measure I
oxide thickness has been scaled to a few atomic layers. The JEDEC 35 Standard (EIA/JESD35, Procedure
for Wafer-Level Testing of Thin Dielectrics) describes two wafer level test techniques commonly used to Yes
monitor oxide integrity: voltage ramp (V-Ramp) and current ramp (J-Ramp). Both techniques provide Initial Failure
I > I