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Number 3220
A Tektronix Company
VDS Ramp and HTRB Reliability Testing of High
Application Note Power Semiconductor Devices with Automated
Series Characterization Suite (ACS) Software
Introduction
Wide bandgap semiconductor materials such as silicon carbide
(SiC) and gallium nitride (GaN) offer physical properties superior
to those of silicon (Si) for power device applications, enabling
devices based on these materials to withstand high voltages and
temperatures, as well as permitting higher frequency response,
greater current density, and faster switching [1]. These emerging
power devices have great potential; however, the technologies
necessary to create and refine them are still under development
and therefore less mature than silicon technology. This creates
some big challenges associated with designing and characterizing
these devices, as well as process monitoring and reliability
issues [2].
Before they can gain commercial acceptance, the reliability
of wide bandgap devices must be proven and there is a demand Figure 1. Automated Characterization Suite (ACS) graphical user interface
for higher reliability requirements. The continuous drive for
greater power density at the device and package levels creates period of time (usually 1,000 hours)[3][5][6][7]. The leakage
consequences in terms of higher temperatures and temperature current is continuously monitored throughout the test and a
gradients across the package. New application areas often mean fairly constant leakage current is generally required to pass
more severe ambient conditions. For example, in automotive the test. Because it combines electrical and thermal stress, this
hybrid traction systems, the cooling liquid for the combustion test can be used to check the junction integrity, crystal defects
engine may reach temperatures as high as 120