Text preview for : AO4726L.pdf part of TOSHIBA AO4726L TOSHIBA AO4726L.pdf
Back to : AO4726L.pdf | Home
AO4726
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description Features
TM
SRFET The AO4726/L uses advanced trench
technology with a monolithically integrated Schottky VDS (V) = 30V
diode to provide excellent R DS(ON) and low gate charge. ID =18A (VGS = 10V)
This device is suitable for use as a low side FET in RDS(ON) < 6m (VGS = 10V)
SMPS, load switching and general purpose RDS(ON) < 7m (VGS = 4.5V)
applications. AO4726 and AO4726L are electrically
identical.
-RoHS Compliant UIS TESTED!
-AO4726L is Halogen Free Rg,Ciss,Coss,Crss Tested
D
S
S
S
D
D
D G
SRFET TM
G D
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings T A=25