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Exploring the boundaries of
materials science or device development?
Learn the latest techniques for ensuring
electrical measurement accuracy
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Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Learn how you can get better correlation of results when you
perform multiple measurement types on a single system
Characterizing a semiconductor device, material, or process thoroughly
requires the ability to make three types of measurements: precision DC I-V
measurements, AC impedance measurements (often made with a C-V meter),
and ultra-fast or transient I-V measurements. Until recently, labs might have
required three separate test systems to obtain all three measurement types.
In addition to added expense, using multiple systems makes it difficult to
combine different measurement types in a single application or to correlate
the results from different types of measurements accurately. Learn more.
Investigate how to get better Remote amplifier/switches and the multi-measurement performance
results correlation at a lower cost. cabling used to connect them to the probe manipulators on the wafer
prober are critical to integrating accurate ultra-fast I-V, C-V, and precision
Download our free white paper. DC I-V measurements into the same parametric analysis system.
Let us offer advice on your application.
Contact an applications engineer online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 2
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Tackle multiple test challenges with the
Model 4200-SCS Semiconductor Characterization System
Only the Model 4200-SCS Semiconductor Characterization
System can handle all three measurement types: precision DC I-V, AC
impedance, and ultra-fast I-V or transient I-V. Low current measurement
resolution can extend to 0.1fA. Capacitance measurements range
from femtoFarads (fF) to nanoFarads (nF) at frequencies from 1kHz
to 10MHz. And ultra-fast I-V sourcing and measurement is as easy as
making DC measurements, and fast: measure both voltage and current
simultaneously for up to one million samples at 5ns per sample. For
all known BTI test methodologies, an optional BTI Package includes
all necessary hardware and software, while Automatic Characterization CliCk
Suite (ACS) software supports full wafer- and cassette-level automation to see
front
and includes NBTI/PBTI test libraries with easy-to-use GUIs. and baCk
views
Need more details?
download the Model
4200-sCs data sheet. Ready to request a quote or place an order?
Call 1-800-492-1955 and
Press 1 to place an order, or email [email protected].
Press 2 to receive help in selecting a product,
or email [email protected].
Press 3 to receive product pricing or availability.
Contact us online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 3
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Ultra-fast I-V testing of compound semiconductor
devices and materials
Pulsed I-V testing is often performed on devices made from III-V materials, such
as GaN, GaAs, and other compound semiconductor materials. These larger
band gap devices are often used in higher power and RF devices. Pulsed I-V
measurements make it possible to manage or investigate the effects of dispersion
during electrical characterization. Sometimes it is necessary to test devices at
higher frequencies in order to simulate the conditions the actual device will
encounter in regular use. Laser diodes and power MOSFETs are two common
compound semiconductor devices that
often require pulse I-V measurements
for characterization. Learn more.
Want to make ultra-fast I-V
measurements?
download our free guide to Laser diode test configuration
CliCk on Red button
to view laRgeR iMage
ultra-fast i-v applications.
view our webinar
on making ultra-fast Let us offer advice on your application.
measurements. Contact an applications engineer online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 4
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Take control of ultra-high speed pulse sourcing
and measurement with the Model 4225-PMU
The Model 4225-PMU Ultra Fast I-V Module is the latest instrumentation
option for the Model 4200-SCS Semiconductor Characterization System.
It integrates ultra-fast voltage waveform generation and signal observation
capabilities into the Model 4200-SCS's already powerful test environment
to deliver unprecedented I-V testing performance, expanding the system's
materials, device, and process characterization potential dramatically.
Just as important, it makes ultra-fast I-V sourcing and measurement
as easy as making DC measurements with a traditional high
resolution Source-Measure Unit (SMU).
Need more details? download Ready to request a quote or place an order?
our Model 4225-PMu data sheet.
Call 1-800-492-1955 and
Press 1 to place an order, or email [email protected].
Press 2 to receive help in selecting a product,
or email [email protected].
Press 3 to receive product pricing or availability.
Contact us online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 5
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Learn how to determine solar cell efficiency using
the latest electrical characterization techniques
Some of the electrical tests commonly performed on solar cells involve
measuring current and capacitance as a function of an applied DC voltage.
Electrical characterization is important in determining how to make the cells
as efficient as possible with minimal losses. Capacitance measurements are
sometimes made as a function of frequency or AC voltage. Some tests require
pulsed current-voltage measurements. These measurements are usually
performed at different light intensities and under different temperature
conditions. A variety of important device parameters can be extracted
from the DC and pulsed current-voltage (I-V) and capacitance-voltage (C-V)
measurements, including output current, conversion
efficiency, maximum power output, doping density,
resistivity, etc. Learn more.
C-V sweep of a silicon solar cell
Discover how to make faster, more
accurate C-V measurements on solar cells.
download our application note.
Let us offer advice on your application.
Contact an applications engineer online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 6
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Plug in to greater capacitance-voltage measurement
capabilities with the Model 4210-CVU
The Model 4210-CVU, the Model 4200-SCS's optional capacitance meter,
can measure capacitance as a function of an applied DC voltage (C-V), a
function of frequency (C-f), a function of time (C-t), or a function of the
AC voltage. The Model 4210-CVU can also measure conductance and
impedance. The Keithley Test Environment Interactive (KTEI) package
combines nine new solar cell test libraries with
an expanded C-V frequency measurement range,
which supports testing flat panel LCDs and organic
semiconductors such as organic light-emitting
diodes (OLEDs).
Ready to request a quote or place an order?
Call 1-800-492-1955 and
Need more details? Press 1 to place an order, or email [email protected].
download our applications flyer. Press 2 to receive help in selecting a product,
or email [email protected].
Press 3 to receive product pricing or availability.
Contact us online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 7
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Put pulses to work to test high power devices
During high power continuous wave testing, a high power device's
semiconductor material will start to dissipate the applied power. As
the material in the device heats up, the conduction current decreases
as the carriers have more collisions with the vibrating lattice (phonon
scattering). Therefore, the measured current will be inaccurately low,
due to joule heating. Because these devices are typically run in pulsed
mode, intermittently, or AC rather than continuously, the currents as
measured with DC techniques won't characterize a device's performance
accurately. For many high power devices, pulsed I-V testing is necessary
to obtain optimal results. Learn more.
Learn how to achieve higher DC and pulse sweeps
currents with your I-V measurement
hardware. Read our app note.
Let us offer advice on your application.
Contact an applications engineer online.
i n d e x | w w w. k e i t h l ey. co m | i n f o @ k e i t h l ey. co m a g r e a t e r m e a s u r e o f c o n f i d e n c e 8
Semiconductor parameter analysis 2 | Pulsed I-V testing of compound semi devices/materials 4 | C-V characterization of solar cells 6 | Pulsed I-V testing of high power devices 8 | I ddq Testing 10
Ultra-low current measurements 12 | Focused ion beam current monitoring 14 | Hall Effect & Graphene-based Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20
Get DC and pulsed measurements in the same box with
Series 2600A System SourceMeter instruments
The Models 2635A and 2636A are both the most sensitive
(1fA) and the most powerful (10A pulse) members of the
Series 2600A System SourceMeter family.
CliCk
n Combines a power supply, true current source, DMM, to see
arbitrary waveform generator, V or I pulse generator front
and baCk
with measurement, electronic load, and trigger views
controller