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Number 2239


Application Note Gate Dielectric Capacitance-Voltage
Series Characterization Using the Model 4200
Semiconductor Characterization System
Introduction Understanding MOS-Capacitor
Maintaining the quality and reliability of gate oxides is one of C-V Measurements
the most critical and challenging tasks in any semiconductor fab. C-V measurements are typically made on a capacitor-like device,
With feature sizes shrinking to 0.18