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appl icat i ons gui de
Pulsed I-V Testing for Components and
Semiconductor Devices
a g r e a t e r m e a s u r e o f c o n f i d e n c e
Pulsed I-V Testing for Components and Semiconductor Devices
Pulsed I-V testing is ideal for preventing device self-heating or minimizing charge trapping effects
when characterizing devices. By using narrow pulses and/or low duty cycle pulses rather than DC
signals, important parameters are extracted while maintaining the DUT performance. Transient I-V
measurements allow scientists and engineers to capture ultra-high-speed current or voltage waveforms
in the time domain in order to study dynamic properties. This pulsed I-V testing applications e-guide
features a concentration of application notes on pulsed I-V testing methods and techniques using
Keithley's Model 4200-SCS Parameter Analyzer.
Contents
Making Proper Electrical Connections to Ensure
Semiconductor Device Measurement Integrity . . . . . 3
An Ultra-Fast Single Pulse (UFSP) Technique for
Channel Effective Mobility Measurement . . . . . . . . . 7
Performing Charge Pumping
Measurements with the Model 4200-SCS
Parameter Analyzer . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Electrical Characterization of Carbon Nanotube
Transistors (CNT FETs) with the Model 4200-SCS
Parameter Analyzer . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Pulsed Characterization of Charge-trapping
Behavior in High-k Gate Dielectrics . . . . . . . . . . . . . 27
Pulse I-V Characterization of
Non-Volatile Memory Technologies . . . . . . . . . . . . . 31
Electrical Characterization of Photovoltaic
Materials and Solar Cells with the
Model 4200-SCS Parameter Analyzer . . . . . . . . . . . 57
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Making Proper Electrical Connections
to Ensure Semiconductor Device
Measurement Integrity
Introduction
ground return pa
Poor-quality electrical connections to the device under test Long th
Prober
(DUT) can compromise the measurement integrity of even the Bulkhead
Prober
Bulkhead
most powerful and sophisticated semiconductor test system. To 50 Pulse 50 Co To 50 Pulse
ble
ax c ax ca
For high speed pulse measurements, interconnect quality Instrument ab
le Co Instrument
ground wi
ort
50
re
typically determines maximum bandwidth; for low current Sh
measurements, it often affects measurement speed and accuracy. Probe Probe
Holder Holder
This application note discusses the problems created by Wafer
poor connections. Although it specifically addresses MOSFET
measurements, the techniques and results discussed also apply 50 coax Not 50 50 coax
to many other devices.
Figure 1. Prober hookups usually do not maintain 50W all the way to the
VDS