. Electronic Components Datasheets cec8218 free download

File name cec8218.pdf

CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D D 20V, 6.5A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). *1K *1K G1 G2 High power and current handing capability. Lead free product is acquired. S1 S2 *Typical value by design D D D D 8 7 6 5 Bottom View 1 2 3 4 DFN3*3 S1 G S2 G 1 2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS