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PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 -- 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -30 V IC collector current - - -4.4 A ICM peak collector current single pulse; - - -10 A tp 1 ms RCEsat collector-emitter IC = -4 A; [1] - 58 86 m saturation resistance IB = -400 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3