. Electronic Components Datasheets stp3nb90 free download

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STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 - 3.5 A TO-220/TO-220FP PowerMeshTM MOSFET TYPE VDSS RDS(on) ID Pw STP3NB90 900 V < 4.2 3.5 A 110 W STP3NB90FP 900 V < 4.2 3.5 A 35 W s TYPICAL RDS(on) = 4 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 2 3 2 1 s GATE CHARGE MINIMIZED 1 s VERY LOW INTRINSIC CAPACITANCES TO-220FP TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, INTERNAL SCHEMATIC DIAGRAM exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP3NB90 P3NB90 TO-220 TUBE STP3NB90FP P3NB90FP TO-220FP TUBE October 2002 1/10 STP3NB90 - STP3NB90FP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NB90 STP3NB90FP VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 k) 900 V VGS Gate- source Voltage