. Electronic Components Datasheets bf1218 free download

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BF1218 Dual N-channel dual gate MOSFET Rev. 01 -- 14 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch to save external components Superior cross modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage digital and analog television tuners professional communication equipment NXP Semiconductors BF1218 Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage DC - - 6 V ID drain current DC - - 30 mA Ptot total power dissipation Tsp 109 C [1] - - 180 mW yfs forward transfer admittance f = 100 MHz; Tj = 25 C