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File name: | but11xi_1.pdf [preview but11xi 1] |
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Mfg: | . Electronic Components Datasheets |
Model: | but11xi 1 🔎 |
Original: | but11xi 1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips but11xi_1.pdf |
Group: | Electronics > Components > Transistors |
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File name but11xi_1.pdf Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths 25 |
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