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PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 -- 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z. 1.2 Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications LED driver for LED chain module LCD backlighting Automotive motor management Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -150 V IC collector current - - -2 A hFE DC current gain VCE = -10 V; [1] 100 180 - IC = -100 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3 sym028 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV9215Z SC-73 plastic surface-mounted package with increased